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PDF IS31AP2036 Data sheet ( Hoja de datos )
| Número de pieza | IS31AP2036 | |
| Descripción | CLASS-K AUDIO POWER AMPLIFIER | |
| Fabricantes | ISSI | |
| Logotipo |  |
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IS31AP2036
HIGH EFFICIENCY, CLASS-K AUDIO POWER AMPLIFIER
WITH INTEGRATED CHARGE PUMP CONVERTER
Advanced Information
January 2014
GENERAL DESCRIPTION
The IS31AP2036 is a Class-K audio power amplifier with
high efficiency and automatic gain control. It drives up to
2.0W (10% THD+N) into an 8Ω speaker from a 4.2V VCC
supply.
The IS31AP2036 integrates advanced K-charge pump
which increases efficiency up to 92% and whole power
amplifier efficiency to 75%. The output power will be
maintained in 0.8W, 1.0W and 1.2W.
The IS31AP2036 provides low cost, space saving
solution for portable equipments which need audio
output with higher power by boosting up supply voltage.
Its external components just include a few capacitors
and resistors (no inductor).
The IS31AP2036 use fully differential design to reduce
RF noise. The IS31AP2036 integrates de-pop circuitry to
reduce pop and click noise during power on/off or
shutdown enable operation. The IS31AP2036 also
integrates thermal and short circuit protection function.
IS31AP2036 is available in FC-16 (2mm × 2mm)
package. It operates from 3.0V to 5.0V over the
temperature range of -40°C to +85°C.
FEATURES
Operates from 3.0V to 5.0V
Advanced K-charge pump technology, efficiency
up to 92%
Low EMI
-65dB (217Hz) high PSRR
0.2% low THD+N
New AGC function
Pulse Count Control serial interface
Output power in 0.8W, 1W and 1.2W levels
Thermal and short-circuit protection
Integrated Click-and-Pop suppression circuitry
Available in FC-16 (2mm × 2mm) package
APPLICATIONS
Smart phones
Cellular phones
PDAs
GPS
Portable electronics
TYPICAL APPLICATION CIRCUIT
Figure 1 Typical Application Circuit (Differential Input)
Integrated Silicon Solution, Inc. – www.issi.com
Rev. 00A, 12/23/2013
1
1 page  
IS31AP2036
ABSOLUTE MAXIMUM RATINGS
Supply voltage, VCC
Voltage at IN+ and IN- pins
Maximum junction temperature, TJMAX
Storage temperature range, TSTG
Operating temperature range, TA
Thermal resistance, junction to ambient, RθJA
ESD (HBM)
ESD (CDM)
-0.3V ~ +6.0V
-0.3V ~ VCC+0.3V
125°C
-65°C ~ +150°C
-40°C ~ +85°C
69°C/W
TBD
TBD
Note:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
DC CHARACTERISTICS (TBD)
TA = 25°C, VCC = 3.0V ~ 5.0V, unless otherwise noted. Typical value are TA = 25°C, VCC = 3.6V.
Symbol Parameter
Condition
Min. Typ.
VCC Supply voltage
3.0
ICC Quiescent current
VCC = 3.6V, no load, no input
9.5
ISD Shutdown current
VCC =3.6V, VSDB = 0V
fOSC Clock frequency
VCC = 2.5V~4.5V
600 800
AV Output gain
RIN = 3kΩ
16.3
tON Turn on time
40
|VOS| Output offset voltage
VCC = 2.5V~4.5V, no input
-30 0
RINT Internal input resistor
16.5
VIH Input logic high voltage
1.3
VIL Input logic low voltage
0
TAGC Thermal AGC threshold temperature
150
TAGC_HYS Thermal AGC hysteresis temperature
20
TOTP Over temperature protection
(Note 1)
160
TTOP_HYS Hysteresis temperature
(Note 1)
30
K-Charge Pump
PVCC Charge pump output voltage
VHYS
η
tST
IL
OVP hysteresis voltage
Efficiency
Soft start time
PVCC short to GND limit current
VCC = 3.0V~3.8V
VCC >3.8V
VCC >3.8V
VCC = 4.2V
COUT = 4.7µF, no load
1.5VCC
5.8
50
92
1.0 1.2
350
Max. Unit
5.0
1
1000
30
VCC
0.35
V
mA
µA
kHz
V/V
ms
mV
kΩ
V
V
°C
°C
°C
°C
V
V
mV
%
1.4 ms
mA
Integrated Silicon Solution, Inc. – www.issi.com
Rev. 00A, 12/23/2013
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IS31AP2036.PDF ] | |
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