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CRS09のメーカーはToshibaです、この部品の機能は「Schottky Barrier Rectifier ( Diode )」です。 |
部品番号 | CRS09 |
| |
部品説明 | Schottky Barrier Rectifier ( Diode ) | ||
メーカ | Toshiba | ||
ロゴ | |||
このページの下部にプレビューとCRS09ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS09
CRS09
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
• Forward voltage: VFM = 0.46 V (max)
• Average forward current: IF (AV) = 1.5 A
• Repetitive peak reverse voltage: VRRM = 30 V
• Suitable for compact assembly due to small surface-mount package
“S−FLATTM” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
VRRM
IF (AV)
IFSM
30
1.5 (Note 1)
30 (50 Hz)
V
A
A
Junction temperature
Storage temperature
Tj
−40~150
°C
Tstg
−40~150
°C
JEDEC
―
Note 1:
Note 2:
Ta = 84°C
JEITA
―
Device mounted on a ceramic board
(board size: 50 mm × 50 mm, land size: 2 mm × 2 mm)
Using continuously under heavy loads (e.g. the application of
TOSHIBA
3-2A1A
Weight: 0.013 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance (junction to ambient)
Thermal resistance (junction to lead)
Symbol
VFM (1)
VFM (2)
VFM (3)
IRRM (1)
IRRM (2)
Cj
Rth (j-a)
Rth (j-ℓ)
Test Condition
Min Typ. Max Unit
IFM = 0.1 A
IFM = 1.0 A
⎯ 0.35 ⎯
⎯ 0.415 ⎯
V
IFM = 1.5 A
⎯ 0.43 0.46
VRRM = 5 V
VRRM = 30 V
⎯ 0.8 ⎯
μA
⎯ 10 50
VR = 10 V, f = 1.0 MHz
⎯ 90 ⎯ pF
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm × 6 mm)
⎯
⎯
⎯ 70
°C/W
⎯ 140
⎯ ⎯ ⎯ 20 °C/W
Start of commercial production
2000-04
1 2013-11-01
1 Page iF – vF
10
3
Tj = 150°C
1 125°C
75°C
0.3
0.1
25°C
0.03
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous forward voltage vF (V)
Ta MAX – IF (AV)
Ceramic substrate (substrate size 50 mm × 50 mm)
160
140
120
100
80 α = 60°
Rectangular
60 waveform
120°
180° DC
40
0° α 360°
20 IF (AV)
Conduction angle α
0 VR = 15 V
0 0.4 0.8 1.2 1.6 2.0
Average forward current IF (AV) (A)
2.4
CRS09
PF (AV) – IF (AV)
0.8
DC
0.7
180°
0.6
120°
0.5
0.4 α = 60°
0.3
Rectangular
waveform
0.2
0° α 360°
0.1
Conduction angle α
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Average forward current IF (AV) (A)
Tℓ max – IF (AV)
160
140
120
100
80 α = 60°
60
Rectangular
waveform
120°
180° DC
40
0° α 360°
20 IF (AV)
Conduction angle α
0 VR = 15 V
0 0.4 0.8 1.2 1.6 2.0
Average forward current IF (AV) (A)
2.4
rth (j-a) – t
30000
① Device mounted on a ceramic board:
10000 Soldering land: 2 mm × 2 mm
② Device mounted on a glass-epoxy board:
Soldering land: 6 mm × 6 mm
1000
②
100
①
10
1
1
10
100
1000
10000 100000
Time t (ms)
3
2013-11-01
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ CRS09 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
CRS01 | Schottky Barrier Rectifier ( Diode ) | Toshiba Semiconductor |
CRS02 | Schottky Barrier Type Schottky Barrier Rectifier | Toshiba Semiconductor |
CRS03 | Schottky Barrier Rectifier ( Diode ) | Toshiba Semiconductor |
CRS04 | SCHOTTKY BARRIER RECTIFIERS | Toshiba Semiconductor |