DataSheet.jp

CRS09 の電気的特性と機能

CRS09のメーカーはToshibaです、この部品の機能は「Schottky Barrier Rectifier ( Diode )」です。


製品の詳細 ( Datasheet PDF )

部品番号 CRS09
部品説明 Schottky Barrier Rectifier ( Diode )
メーカ Toshiba
ロゴ Toshiba ロゴ 




このページの下部にプレビューとCRS09ダウンロード(pdfファイル)リンクがあります。

Total 5 pages

No Preview Available !

CRS09 Datasheet, CRS09 PDF,ピン配置, 機能
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS09
CRS09
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Forward voltage: VFM = 0.46 V (max)
Average forward current: IF (AV) = 1.5 A
Repetitive peak reverse voltage: VRRM = 30 V
Suitable for compact assembly due to small surface-mount package
“SFLATTM” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
VRRM
IF (AV)
IFSM
30
1.5 (Note 1)
30 (50 Hz)
V
A
A
Junction temperature
Storage temperature
Tj
40~150
°C
Tstg
40~150
°C
JEDEC
Note 1:
Note 2:
Ta = 84°C
JEITA
Device mounted on a ceramic board
(board size: 50 mm × 50 mm, land size: 2 mm × 2 mm)
Using continuously under heavy loads (e.g. the application of
TOSHIBA
3-2A1A
Weight: 0.013 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance (junction to ambient)
Thermal resistance (junction to lead)
Symbol
VFM (1)
VFM (2)
VFM (3)
IRRM (1)
IRRM (2)
Cj
Rth (j-a)
Rth (j-)
Test Condition
Min Typ. Max Unit
IFM = 0.1 A
IFM = 1.0 A
0.35
0.415
V
IFM = 1.5 A
0.43 0.46
VRRM = 5 V
VRRM = 30 V
0.8
μA
10 50
VR = 10 V, f = 1.0 MHz
90 pF
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm × 6 mm)
70
°C/W
140
⎯ ⎯ ⎯ 20 °C/W
Start of commercial production
2000-04
1 2013-11-01

1 Page





CRS09 pdf, ピン配列
iF – vF
10
3
Tj = 150°C
1 125°C
75°C
0.3
0.1
25°C
0.03
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous forward voltage vF (V)
Ta MAX – IF (AV)
Ceramic substrate (substrate size 50 mm × 50 mm)
160
140
120
100
80 α = 60°
Rectangular
60 waveform
120°
180° DC
40
α 360°
20 IF (AV)
Conduction angle α
0 VR = 15 V
0 0.4 0.8 1.2 1.6 2.0
Average forward current IF (AV) (A)
2.4
CRS09
PF (AV) – IF (AV)
0.8
DC
0.7
180°
0.6
120°
0.5
0.4 α = 60°
0.3
Rectangular
waveform
0.2
α 360°
0.1
Conduction angle α
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Average forward current IF (AV) (A)
Tmax – IF (AV)
160
140
120
100
80 α = 60°
60
Rectangular
waveform
120°
180° DC
40
α 360°
20 IF (AV)
Conduction angle α
0 VR = 15 V
0 0.4 0.8 1.2 1.6 2.0
Average forward current IF (AV) (A)
2.4
rth (j-a) – t
30000
Device mounted on a ceramic board:
10000 Soldering land: 2 mm × 2 mm
Device mounted on a glass-epoxy board:
Soldering land: 6 mm × 6 mm
1000
100
10
1
1
10
100
1000
10000 100000
Time t (ms)
3
2013-11-01


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ CRS09 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
CRS01

Schottky Barrier Rectifier ( Diode )

Toshiba Semiconductor
Toshiba Semiconductor
CRS02

Schottky Barrier Type Schottky Barrier Rectifier

Toshiba Semiconductor
Toshiba Semiconductor
CRS03

Schottky Barrier Rectifier ( Diode )

Toshiba Semiconductor
Toshiba Semiconductor
CRS04

SCHOTTKY BARRIER RECTIFIERS

Toshiba Semiconductor
Toshiba Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap