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CMS30I30A の電気的特性と機能

CMS30I30AのメーカーはToshibaです、この部品の機能は「Schottky Barrier Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 CMS30I30A
部品説明 Schottky Barrier Diode
メーカ Toshiba
ロゴ Toshiba ロゴ 




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CMS30I30A Datasheet, CMS30I30A PDF,ピン配置, 機能
Schottky Barrier Diode
CMS30I30A
1. Applications
• Secondary Rectification in Switching Regulators
• Reverse-Current Protection in Mobile Devices
2. Features
(1) Peak forward voltage: VFM = 0.49 V (max)@IF = 3.0 A
(2) Average forward current: IF(AV) = 3.0 A
(3) Repetitive peak reverse voltage: VRRM = 30 V
(4) Small, thin package suitable for high-density board assembly
Toshiba Nickname: M-FLATTM
3. Packaging and Internal Circuit Pin Assignment
CMS30I30A
1: Anode
2: Cathode
3-4E1S
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol Note
Rating
Unit
Repetitive peak reverse voltage
VRRM
30
V
Average forward current
IF(AV) (Note 1)
3.0
A
Non-repetitive peak forward surge current
IFSM (Note 2)
30
Junction temperature
Tj
150
Storage temperature
Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: T= 102 , square wave (α = 180°), VR = 15 V
Note 2: f = 50 Hz, half-sine wave
Start of commercial production
2010-10
1 2014-01-24
Rev.3.0

1 Page





CMS30I30A pdf, ピン配列
CMS30I30A
8. Usage Considerations
(1) Schottky barrier diodes (SBDs) have reverse current greater than other types of diodes. This makes
SBDs more vulnerable to damage due to thermal runaway under high-temperature and high-voltage
conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and
safety design.
(2) The absolute maximum ratings are rated values that must not be exceeded during operation, even for an
instant. The following are the recommended general derating methods for designing a circuit board using
this device.
VRRM:Use this rating with reference to (1) above. VRRM has a temperature
coefficient of 0.1%/at low temperatures. Take this coefficient into account when designing a
circuit board that will be operated in a low-temperature environment.
IF(AV):We recommend that the worst-case current be no greater than 80% of the absolute maximum
rating of IF(AV) and that the worst-case junction temperature, Tj, be kept below 120. When using
this device,
allow margins, referring to the Ta(max)-IF(AV) curve.
IFSM:This rating specifies peak non-repetitive forward surge current. This only applies to an abnormal
operation, which seldom occurs during the lifespan of a device.
Tj: Derate device parameters in proportion to this rating in order to ensure high reliability.
We recommend that the junction temperature (Tj) of a device be kept below 120.
(3) Thermal resistance (junction-to-ambient) varies with the mounting conditions of a device on a circuit
board. An appropriate thermal resistance value should be used, considering the heat sink, circuit board
design and soldering land size.
(4) For other design considerations, see the Rectifiers databook or the Toshiba Semiconductor website.
3 2014-01-24
Rev.3.0


3Pages


CMS30I30A 電子部品, 半導体
CMS30I30A
Fig. 10.6 rth(j-a) - t
Fig. 10.7 Cj - VR
Fig. 10.8 IR - Tj
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
6 2014-01-24
Rev.3.0

6 Page



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部品番号部品説明メーカ
CMS30I30A

Schottky Barrier Diode

Toshiba
Toshiba


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