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1SS405 PDF Data sheet ( 特性 )

部品番号 1SS405
部品説明 Silicon Epitaxial Schottky Barrier Type Diode
メーカ Toshiba
ロゴ Toshiba ロゴ 



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1SS405 Datasheet, 1SS405 PDF,ピン配置, 機能
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS405
High Speed Switching Application
1SS405
Unit: mm
z Low forward voltage
z Low reverse current
z Small total capacitance
: VF (3) = 0.50V (typ.)
: IR= 0.5μA (max)
: CT = 3.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
25 V
Reverse voltage
VR 20 V
Maximum (peak) forward current IFM 100 mA
Average forward current
IO 50 mA
Surge current (10ms)
IFSM
1A
Power dissipation
P * 150 mW
Junction temperature
Storage temperature range
Tj
125 °C JEDEC
JEITA
Tstg 55 to 125 °C TOSHIBA
1-1G1A
Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.4mg(Typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
IF = 1mA
IF = 5mA
IF = 50mA
VR = 20V
VR = 0, f = 1MHz
Min Typ. Max Unit
0.33
0.38
V
0.50 0.55
― ― 0.5 μA
3.9 pF
Equivalent Circuit (Top View)
Marking
A7
Start of commercial production
2001-09
1 2014-03-01

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