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IS42S16100F の電気的特性と機能

IS42S16100FのメーカーはISSIです、この部品の機能は「512K Words x 16 Bits x 2 Banks 16Mb SDRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS42S16100F
部品説明 512K Words x 16 Bits x 2 Banks 16Mb SDRAM
メーカ ISSI
ロゴ ISSI ロゴ 




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IS42S16100F Datasheet, IS42S16100F PDF,ピン配置, 機能
IS42/45S16100F, IS42VS16100F
512K Words x 16 Bits x 2 Banks
16Mb SDRAM
JUNE 2012
FEATURES
• Clock frequency:
IS42/45S16100F: 200, 166, 143 MHz
IS42VS16100F: 133, 100 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Two banks can be operated simultaneously and
independently
• Dual internal bank controlled by A11
(bank select)
• Single power supply:
IS42/45S16100F: Vdd/Vddq = 3.3V
IS42VS16100F: Vdd/Vddq = 1.8V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• 2048 refresh cycles every 32 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and
precharge command
• Byte controlled by LDQM and UDQM
• Packages 400-mil 50-pin TSOP-II and 60-ball
BGA
• Lead-free package option
• Available in Industrial Temperature
DESCRIPTION
ISSI’s 16Mb Synchronous DRAM IS42S16100F,
IS45S16100F and IS42VS16100F are each organized
as a 524,288-word x 16-bit x 2-bank for improved
performance. The synchronous DRAMs achieve high-
speed data transfer using pipeline architecture. All
inputs and outputs signals refer to the rising edge of the
clock input.
ADDRESS TABLE
Parameter
Power Supply Vdd/Vddq
Refresh Count
Row Addressing
IS42/45S16100F IS42VS16100F
3.3V
1.8V
2K/32ms
2K/32ms
A0-A10
Column Addressing
Bank Addressing
Precharge Addressing
A0-A7
A11
A10
KEY TIMING PARAMETERS
Parameter
CLK Cycle Time
-5(1) -6(2) -7 (2) -75 (3) -10 (3) Unit
CAS Latency = 3 5 6 7 7.5 10 ns
CAS Latency = 2 10 10 10 10 12 ns
CLK Frequency
CAS Latency = 3 200 166 143 133 100 Mhz
CAS Latency = 2 100 100 100 100 83 Mhz
Access Time from
Clock
CAS Latency = 3
5 5.5 5.5 6
7 ns
CAS Latency = 2 6 6 6 8 8 ns
Notes:
1. Available for IS42S16100F only
2. Available for IS42S16100F and IS45S16100F only
3. Available for IS42VS16100F only
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the
latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
06/13/2012
1

1 Page





IS42S16100F pdf, ピン配列
IS42/45S16100F, IS42VS16100F
PIN CONFIGURATION
package code: B 60 bALL Tf-bga (Top View) (10.1 mm x 6.4 mm Body, 0.65 mm Ball Pitch)
1234567
A
VSS DQ15
B
DQ14 VSSQ
C
DQ13 VDDQ
D
DQ12 DQ11
E
DQ10 VSSQ
F
DQ9 VDDQ
G
DQ8 NC
H
NC NC
J
NC UDQM
K
NC CLK
L
CKE NC
M
A11 A9
N
A8 A7
P
A6 A5
R
VSS A4
DQ0 VDD
VDDQ DQ1
VSSQ DQ2
DQ4 DQ3
VDDQ DQ5
VSSQ DQ6
NC DQ7
VDD NC
LDQM WE
RAS CAS
NC CS
NC NC
A0 A10
A2 A1
A3 VDD
PIN DESCRIPTIONS
A0-A10
Row Address Input
A0-A7
Column Address Input
A11
Bank Select Address
DQ0 to DQ15 Data I/O
CLK
System Clock Input
CKE
Clock Enable
CS
Chip Select
RAS
Row Address Strobe Command
CAS
Column Address Strobe Command
WE
LDQM, UDQM
Vdd
Vss
Vddq
Vssq
NC
Write Enable
x16 Input/Output Mask
Power
Ground
Power Supply for I/O Pin
Ground for I/O Pin
No Connection
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
06/13/2012
3


3Pages


IS42S16100F 電子部品, 半導体
IS42/45S16100F, IS42VS16100F
IS42S16100F ELECTRICAL SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Vdd max
Maximum Supply Voltage
Vddq max
Maximum Supply Voltage for Output Buffer
Vin
Input Voltage
Vout
Output Voltage
Pd max
Allowable Power Dissipation
Ics Output Shorted Current
Topr
Operating Temperature
Com.
Ind.
Automotive, A1
Tstg
Storage Temperature
Rating
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
1
50
0 to +70
-40 to +85
-40 to +85
–55 to +150
Unit
V
V
V
V
W
mA
°C
°C
°C
°C
DC RECOMMENDED OPERATING CONDITIONS(2)
Commercial (Ta = 0°C to +70°C), Industrial (Ta = -40°C to +85°C), Automotive, A1 (Ta = -40°C to +85°C)
Symbol
Vdd, Vddq
Vih
Vil
Iil
Iol
Voh
Vol
Parameter
Test Condition
Supply Voltage
Input High Voltage(3)
Input Low Voltage(4)
Input Leakage Current
0V Vin VDD, with pins other than
the tested pin at 0V
Output Leakage Current Output is disabled, 0V Vout VDD
Output High Voltage Level Iout = –2 mA
Output Low Voltage Level Iout = +2 mA
Min.
3.0
2.0
-0.3
-5
Typ. Max. Unit
3.3 3.6
V
— Vddq + 0.3 V
— +0.8 V
5 µA
-5
2.4
5 µA
— V
0.4 V
CAPACITANCE CHARACTERISTICS(1,2) (At Ta = 0 to +25°C, VDD = VDDQ = 3.3 ± 0.3V, f = 1 MHz)
Symbol Parameter
Min. Max. Unit
Cin1
Cin2
Input Capacitance: CLK
2.5
Input Capacitance: (A0-A11, CKE, CS, RAS, CAS, WE, LDQM, UDQM) 2.5
4.0 pF
4.0 pF
CI/O
Data Input/Output Capacitance: DQ0-DQ15
4.0 5.0 pF
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2. All voltages are referenced to VSS.
3. Vih (max) = Vddq + 1.2V with a pulse width 3 ns.
4. Vil (min) = -1.2V with a pulse width 3 ns.
6 Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
06/13/2012

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IS42S16100

512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM

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IS42S16100A1

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

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IS42S16100C1

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

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IS42S16100E

512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM

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