DataSheet.jp

K2111 の電気的特性と機能

K2111のメーカーはNECです、この部品の機能は「MOSFET ( Transistor ) - 2SK2111」です。


製品の詳細 ( Datasheet PDF )

部品番号 K2111
部品説明 MOSFET ( Transistor ) - 2SK2111
メーカ NEC
ロゴ NEC ロゴ 




このページの下部にプレビューとK2111ダウンロード(pdfファイル)リンクがあります。

Total 6 pages

No Preview Available !

K2111 Datasheet, K2111 PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2111
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2111 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators, such as
motors and DC/DC converters.
FEATURES
• Low ON resistance
RDS(on) = 0.6 MAX. @VGS = 4.0 V, ID = 0.5 A
• High switching speed
ton + toff < 100 ns
• Low parasitic capacitance
PACKAGE DIMENSIONS (in mm)
4.5 ± 0.1
1.6 ± 0.2
1.5 ± 0.1
SDG
0.42
±0.06 1.5
0.42
0.47 ±0.06
±0.06
3.0
0.41+–00..0053
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Internal diode
Gate protection
diode
Source (S)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: NU
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
VGS = 0
VDS = 0
TEST CONDITIONS
PW 10 ms,
Duty cycle 50 %
16 cm2 × 0.7 mm, ceramic substrate used
RATING
60
±20
±1.0
±2.0
2.0
150
–55 to +150
UNIT
V
V
A
A
W
˚C
˚C
Document No. D11231EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
1996

1 Page





K2111 pdf, ピン配列
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 30 60 90 120 150
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1.0
10 V
2.5 V
0.8 4.5 V
4.0 V
3.5 V
0.6 3.0 V
0.4 VGS = 2.0 V
0.2
0 0.4 0.8 1.2 1.6 2.0
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10 VDS = 10 V
1
TA = –25 ˚C
0.1
25 ˚C
75 ˚C
0.01
0.001
0.01
0.1
ID - Drain Current - A
1
2SK2111
FORWARD BIAS SAFE OPERATING AREA
10
5
2
1
100 ms 1 ms
PW
0.5 DC = 100 ms
0.2
Single pulse
0.1
1
2
5
10 20
50
VDS - Drain to Source Voltage - V
100
TRANSFER CHARACTERISTICS
1
VDS = 10 V
0.1
0.01
TA = 75 ˚C
25 ˚C
–25 ˚C
0.001
0.0001
0.5
1 1.5 2 2.5
VGS - Gate to Source Voltage - V
3
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
10
VGS = 4 V
0.5
0
0.01
TA = 75 ˚C
25 ˚C
–25 ˚C
0.1 1
ID - Drain Current - A
10
3


3Pages


K2111 電子部品, 半導体
[MEMO]
2SK2111
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11

6 Page



ページ 合計 : 6 ページ
 
PDF
ダウンロード
[ K2111 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
K2111

MOS Field Effect Transistor

Kexin
Kexin
K2111

MOSFET ( Transistor ) - 2SK2111

NEC
NEC
K2114

MOSFET ( Transistor ) - 2SK2114

Hitachi Semiconductor
Hitachi Semiconductor
K2115

MOSFET ( Transistor ) - 2SK2115

Hitachi Semiconductor
Hitachi Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap