IRF223 Datasheet PDF - Harris
| Part Number | IRF223 | |
| Description | N-Channel Power MOSFETs | |
| Manufacturers | Harris | |
| Logo |  |
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There is a preview and IRF223 download ( pdf file ) link at the bottom of this page. Total 7 Pages | ||
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Semiconductor
October 1997
IRF220, IRF221,
IRF222, IRF223
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,
N-Channel Power MOSFETs
Features
• 4.0A and 5.0A, 150V and 200V
• rDS(ON) = 0.8Ω and 1.2Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF220
TO-204AA
IRF220
IRF221
TO-204AA
IRF221
IRF222
TO-204AA
IRF222
IRF223
TO-204AA
IRF223
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA09600.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 199&
1
File Number 1567.2
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IRF220, IRF221, IRF222, IRF223
Typical Performance Curves Unless Otherwise Specified (Continued)
5 10
10V
80µs PULSE TEST
80µs PULSE TEST
8V VDS >ID(ON) x rDS(ON) MAX
4 6V
8
VGS = 5V
3
6
2
1 4V
0
0 24 6 8
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
4
TJ = 125oC
2 TJ = 25oC
TJ = -55oC
0
0 24
68
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
1.5
1.0
VGS = 10V
2.2
VGS = 10V
ID = 2A
1.8
1.4
VGS = 20V
1.0
0.5
0.6
0
0 5 10
ID, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs is minimal.
15
20
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0.2
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
1000
800
600
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
400 CISS
200
0
0
COSS
CRSS
10 20 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF223 electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRF223.PDF Datasheet ] | |
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