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IRF222 の電気的特性と機能

IRF222のメーカーはHarrisです、この部品の機能は「N-Channel Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF222
部品説明 N-Channel Power MOSFETs
メーカ Harris
ロゴ Harris ロゴ 




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IRF222 Datasheet, IRF222 PDF,ピン配置, 機能
Semiconductor
October 1997
IRF220, IRF221,
IRF222, IRF223
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,
N-Channel Power MOSFETs
Features
• 4.0A and 5.0A, 150V and 200V
• rDS(ON) = 0.8and 1.2
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF220
TO-204AA
IRF220
IRF221
TO-204AA
IRF221
IRF222
TO-204AA
IRF222
IRF223
TO-204AA
IRF223
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA09600.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 199&
1
File Number 1567.2

1 Page





IRF222 pdf, ピン配列
IRF220, IRF221, IRF222, IRF223
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
CISS
COSS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 11)
- 450 -
- 150 -
CRSS
- 40 -
LD Measured Between the Modified MOSFET
- 5.0 -
Contact Screw on the Symbol Showing the
Flange that is Closer to Internal Device
Source and Gate Pins and Inductances
the Center of Die
D
pF
pF
pF
nH
Internal Source Inductance
LS Measured From the
Source Lead, 6mm
(0.25in) From the Flange G
and the Source Bonding
Pad
LD
- 12.5 -
nH
LS
S
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
Free Air Operation
- - 3.12 oC/W
- - 30 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Continuous Source to Drain Current
IRF220, IRF221
IRF222, IRF223
Pulse Source to Drain Current (Note 3)
IRF220, IRF221
IRF222, IRF223
ISD Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Rectifier
ISDM
G
D
- - 5.0 A
- - 4.0 A
- - 20 A
S
- - 16 A
Source to Drain Diode Voltage (Note 2)
IRF220, IRF221
IRF222, IRF223
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TC = 25oC, ISD = 5.0A, VGS = 0V, (Figure 13)
TC = 25oC, ISD = 4.0A, VGS = 0V, (Figure 13)
TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs
- - 2.0
- - 1.8
- 350 -
- 2.3 -
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 10V, starting TJ = 25oC, L = 6.18mH, RG = 50Ω, peak IAS = 5A. See Figures 15, 16.
V
V
ns
µC
3


3Pages


IRF222 電子部品, 半導体
IRF220, IRF221, IRF222, IRF223
Typical Performance Curves Unless Otherwise Specified (Continued)
5
VDS > ID(ON) x rDS(ON)MAX
80µs PULSE TEST
4
3
2
TJ = -55oC
TJ = 25oC
TJ = 125oC
1
0
0246
8 10
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
2
100
TJ = 25oC
TJ = 150oC
10
TJ = 150oC
TJ = 25oC
1.0
0
1 23
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
4
20
ID = 6.0A
15 VDS = 40V
VDS = 100V
10
VDS = 160V
IRF220, IRF222
5
0
0 4 8 12 16 20
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
6

6 Page



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