(PDF) HHV0405-175 Datasheet

Número de pieza	HHV0405-175
Descripción	Silicon MOSFET
Fabricantes	ASI
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No Preview Available ! PACKAGE 1 page H V V0405-175 H igh Voltage, H igh Ruggedness U H F Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For U H F band, Weather and Long Range Radar Applications Typical device performance under Class AB mode of operation at 450MHz and RF pulse conditions of 300µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 50mA. The high voltage silicon vertical technology shows less than 1dB of power degradation over an extreme case teperature rise of 125°C. Measured at P1dB Compression Point TEMP -40C 0C 25C 85C Gain (dB) Power (W) 26.5 224 25.9 233 25.5 237 24.2 210 Power (dBm) 53.5 53.7 53.7 53.2 ! HVV0405-175 Performance over Temperature 5 Page

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PDF HHV0405-175 Data sheet ( Hoja de datos )