INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
53N06
·DESCRIPTION
·Drain Current ID= 53A@ TC=25℃
·Drain Source Voltage-
: VDSS= 60V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
60
±30
53
V
V
A
ID(puls)
Pulse Drain Current
212 A
Ptot Total Dissipation@TC=25℃
150 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.96 ℃/W
62.5 ℃/W
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