PDF IS43R32400D Data sheet ( Hoja de datos )

Número de pieza	IS43R32400D
Descripción	128Mb DDR SDRAM
Fabricantes	Integrated Silicon Solution
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No Preview Available ! IS43R32400D 4Mx32 128Mb DDR SDRAM SEPTEMBER 2011 FEATURES • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs • Differential clock inputs (CK and CK) • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Four internal banks for concurrent operation • Data Mask for write data. DM masks write data at both rising and falling edges of data strobe • Burst Length: 2, 4 and 8 • Burst Type: Sequential and Interleave mode • Programmable CAS latency: 2, 2.5, 3 and 4 • Auto Refresh and Self Refresh Modes • Auto Precharge • VDD and VDDQ: 2.5V ± 0.2V (-5, -6) • VDD and VDDQ: 2.5V ± 0.125V (-4) • SSTL_2 compatible I/O OPTIONS • Configuration(s): 4M x32 • Package(s): 144 Ball BGA (x32) • Lead-free package available • Temperature Range: Commercial (0°C to +70°C) Industrial (-40°C to +85°C) DEVICE OVERVIEW ISSI’s 128-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 134,217,728-bit memory array is internally organized as four banks of 32Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages. The device is available in 32-bit data word size Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. Commands are registered on the positive edges of CLK. An Auto Refresh mode is provided, along with a Self Refresh mode. All I/Os are SSTL_2 compatible. ADDRESS TABLE Parameter 4M x 32 Configuration 1M x 32 x 4 banks Bank Address Pins BA0, BA1 Autoprecharge Pins A8/AP Row Addresses 4K(A0 – A11) Column Address 256(A0 – A7) Refresh Count 4K / 32ms KEY TIMING PARAMETERS Speed Grade -4 -5 -6 Units Fck Max CL = 4 250 200 166 MHz Fck Max CL = 3 200 200 166 MHz Fck Max CL = 2.5 – 166 166 MHz Fck Max CL = 2 – 133 133 MHz Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat- est version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason- ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. Rev. A 09/07/2011 1 1 page IS43R32400D SIMPLIFIED STATE DIAGRAM Power Applied Power On Precharge PREALL MRS EMRS MRS REFS Self Refresh REFSX Idle REFA Auto Refresh CKEH CKEL Active Power Down ACT CKEL CKEH Precharge Power Down Write Write Write Row Active Read Burst Stop Write A Read A Read Read Read Write A Write A PRE PRE Read A PRE Read A Read A PRE Precharge PREALL Automatic Sequence Command Sequence PREALL = Precharge All Banks CKEL = Enter Power Down MRS = Mode Register Set CKEH = Exit Power Down EMRS = Extended Mode Register Set ACT = Active Integrated Silicon Solution, Inc. Rev. A 09/07/2011 REFS = Enter Self Refresh Write A = Write with Autoprecharge REFSX = Exit Self Refresh Read A = Read with Autoprecharge REFA = Auto Refresh PRE = Precharge 5 5 Page IS43R32400D CAS LATENCIES Integrated Silicon Solution, Inc. Rev. A 09/07/2011 11 11 Page

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