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IS61C1024 の電気的特性と機能

IS61C1024のメーカーはIntegrated Silicon Solutionです、この部品の機能は「128K x 8 HIGH-SPEED CMOS STATIC RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS61C1024
部品説明 128K x 8 HIGH-SPEED CMOS STATIC RAM
メーカ Integrated Silicon Solution
ロゴ Integrated Silicon Solution ロゴ 




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IS61C1024 Datasheet, IS61C1024 PDF,ピン配置, 機能
IS61C1024
IS61C1024L
128K x 8 HIGH-SPEED
CMOS STATIC RAM
ISSI®
MAY 1999
FEATURES
• High-speed access time: 12, 15, 20, 25 ns
Low active power: 600 mW (typical)
Low standby power: 500 µW (typical) CMOS
standby
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
• Low power version available: IS61C1024L
• Commercial and industrial temperature ranges
available
DESCRIPTION
The ISSI IS61C1024 and IS61C1024L are very high-speed,
low power, 131,072-word by 8-bit CMOS static RAMs. They
are fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with innovative
circuit design techniques, yields higher performance and low
power consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs, CE1 and CE2. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS61C1024 and IS61C1024L are available in 32-pin
300-mil SOJ, and TSOP (Type I, 8x20), and sTSOP (Type I,
8 x 13.4) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
VCC
GND
I/O0-I/O7
DECODER
I/O
DATA
CIRCUIT
512 x 2048
MEMORY ARRAY
COLUMN I/O
CE1
CE2
CONTROL
OE CIRCUIT
WE
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR028-1K
05/12/99
1

1 Page





IS61C1024 pdf, ピン配列
IS61C1024
IS61C1024L
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
VTERM
TBIAS
TSTG
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
–0.5 to +7.0
–55 to +125
–65 to +150
V
°C
°C
PT Power Dissipation
1.5 W
IOUT DC Output Current (LOW)
20 mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol Parameter
Conditions
Max.
Unit
CIN Input Capacitance
VIN = 0V
5 pF
COUT
Output Capacitance
VOUT = 0V
7 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.
ISSI®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH Output HIGH Voltage
VOL Output LOW Voltage
VIH Input HIGH Voltage
VIL Input LOW Voltage(1)
ILI Input Leakage
Test Conditions
VCC = Min., IOH = –4.0 mA
VCC = Min., IOL = 8.0 mA
GND VIN VCC
ILO Output Leakage
GND VOUT VCC
Outputs Disabled
Note:
1. VIL = –3.0V for pulse width less than 10 ns.
Com.
Ind.
Com.
Ind.
Min.
2.4
2.2
–0.3
–2
–5
–2
–5
Max.
0.4
VCC + 0.5
0.8
2
5
2
5
Unit
V
V
V
V
µA
µA
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR028-1K
05/12/99
3


3Pages


IS61C1024 電子部品, 半導体
IS61C1024
IS61C1024L
AC WAVEFORMS
READ CYCLE NO. 1(1,2)
ADDRESS
DOUT
PREVIOUS DATA VALID
t OHA
t RC
t AA
ISSI®
t OHA
DATA VALID
READ1.eps
READ CYCLE NO. 2(1,3)
ADDRESS
OE
CE1
t RC
t AA
t DOE
t LZOE
CE2
DOUT
t LZCE1
t LZCE2
HIGH-Z
t ACE1
t ACE2
DATA VALID
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH.
3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions.
t OHA
t HZOE
t HZCE1
t HZCE2
CE2_RD2.eps
6 Integrated Silicon Solution, Inc. — 1-800-379-4774
SR028-1J
11/03/98

6 Page



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共有リンク

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部品番号部品説明メーカ
IS61C1024

128K x 8 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution
Integrated Silicon Solution
IS61C1024L

128K x 8 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution
Integrated Silicon Solution


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