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PDF IS61NVVP409618B Data sheet ( Hoja de datos )

Número de pieza IS61NVVP409618B
Descripción PIPELINE (NO WAIT) STATE BUS SRAM
Fabricantes Integrated Silicon Solution 
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IS61NLP204836B/IS61NVP/NVVP204836B
IS61NLP409618B/IS61NVP/NVVP409618B 
2M x 36 and 4M x 18
AUGUST 2014
72Mb, PIPELINE 'NO WAIT' STATE BUS SRAM
FEATURES
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address,
data and control
• Interleaved or linear burst sequence control us-
ing MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Power Down mode
• Common data inputs and data outputs
CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 165-ball PBGA and 119-
ball PBGA packages
• Power supply:
NLP: Vdd 3.3V (± 5%), Vddq 3.3V/2.5V (± 5%)
NVP: Vdd 2.5V (± 5%), Vddq 2.5V (± 5%)
NVVP: Vdd 1.8V (± 5%), Vddq 1.8V (± 5%)
• JTAG Boundary Scan for PBGA packages
• Industrial temperature available
• Lead-free available
FAST ACCESS TIME
Symbol
tkq
tkc
Parameter
Clock Access Time
Cycle Time
Frequency
250 200
2.8 3.1
45
250 200
DESCRIPTION
The 72 Meg product family features high-speed, low-power
synchronous static RAMs designed to provide a burstable,
high-performance, 'no wait' state, device for networking
and communications applications. They are organized as
2,096,952 words by 36 bits and 4,193,904 words by 18
bits, fabricated with ISSI's advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
by a positive-edge-triggered single clock input. Operations
may be suspended and all synchronous inputs ignored
when Clock Enable, CKE is HIGH. In this state the internal
device will hold their previous values.
All Read, Write and Deselect cycles are initiated by theADV
input. When the ADV is HIGH the internal burst counter
is incremented. New external addresses can be loaded
when ADV is LOW.
Write cycles are internally self-timed and are initiated
by the rising edge of the clock inputs and when WE is
LOW. Separate byte enables allow individual bytes to be
written.
A burst mode pin (MODE) defines the order of the burst
sequence. When tied HIGH, the interleaved burst sequence
is selected. When tied LOW, the linear burst sequence is
selected.
166 Units
3.8 ns
6 ns
166 MHz
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 1
Rev. A
8/4/2014

1 page




IS61NVVP409618B pdf
IS61NLP204836B/IS61NVP/NVVP204836B
IS61NLP409618B/IS61NVP/NVVP409618B 
119-PIN PBGA PACKAGE CONFIGURATION
1234
A VDDQ
A
A
A
B NC CE2 A ADV
C NC
A
A VDD
D
DQc
DQPc
VSS
NC
E DQc DQc VSS
CE
F VDDQ DQc
VSS
OE
G DQc DQc BWc
A
H DQc DQc VSS
WE
J
VDDQ
VDD
NC
VDD
K DQd DQd VSS CLK
L
DQd
DQd
BWd
NC
M VDDQ DQd
VSS
CKE
N DQd DQd VSS
A1*
P
DQd
DQPd
VSS
A0*
R NC
A
MODE
VDD
T NC
A
A
A
U VDDQ TMS TDI TCK
2M x 36 (TOP VIEW)
56
AA
A CE2
AA
VSS
DQPb
VSS
DQb
VSS
DQb
BWb
DQb
VSS
DQb
NC VDD
VSS
DQa
BWa
DQa
VSS
DQa
VSS
DQa
VSS
DQPa
NC A
AA
TDO
NC
7
VDDQ
NC
NC
DQb
DQb
VDDQ
DQb
DQb
VDDQ
DQa
DQa
VDDQ
DQa
DQa
NC
ZZ
VDDQ
Note: A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
Pin Name
A Synchronous Address Inputs
A0, A1
Synchronous Burst Address Inputs
ADV
Synchronous Burst Address Advance/
Load
WE Synchronous Read/Write Control Input
CLK
Synchronous Clock
CKE
Synchronous Clock Enable
CE
Synchronous Chip Select
CE2
Synchronous Chip Select
CE2
Synchronous Chip Select
BWa-BWd Synchronous Byte Write Inputs
OE
Asynchronous Output Enable
ZZ
Asynchronous Power Sleep
Mode
MODE Burst Sequence Selection
TCK, TDO JTAG Pins
TMS, TDI
Vdd
Power Supply
Vss
Ground
NC
DQa-DQd
No Connect
Synchronous Data Inputs/Outputs
DQPa-DQPd Synchronous Parity Data
Inputs/Outputs
Vddq
I/O Power Supply
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
8/4/2014
5

5 Page





IS61NVVP409618B arduino
IS61NLP204836B/IS61NVP/NVVP204836B
IS61NLP409618B/IS61NVP/NVVP409618B 
ASYNCHRONOUS TRUTH TABLE(1)
Operation ZZ OE
I/O STATUS
Sleep Mode
H X
High-Z
Read
L L
L H
DQ
High-Z
Write
L X
Din, High-Z
Deselected
L X
High-Z
Notes:
1. X means "Don't Care".
2. For write cycles following read cycles, the output buffers must be disabled with OE, otherwise data
bus contention will occur.
3. Sleep Mode means power Sleep Mode where stand-by current does not depend on cycle time.
4. Deselected means power Sleep Mode where stand-by current depends on cycle time.
WRITE TRUTH TABLE (x18)
Operation
WE BWa BWb
READ
H X X
WRITE BYTE a L L H
WRITE BYTE b L H L
WRITE ALL BYTEs
L
L
L
WRITE ABORT/NOP
L
H
H
Notes:
1. X means "Don't Care".
2. All inputs in this table must beet setup and hold time around the rising edge of CLK.
Integrated Silicon Solution, Inc. — www.issi.com 11
Rev. A
8/4/2014

11 Page







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