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IFN112のメーカーはInterFET Corporationです、この部品の機能は「N-Channel Silicon Junction Field-Effect Transistor」です。 |
部品番号 | IFN112 |
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部品説明 | N-Channel Silicon Junction Field-Effect Transistor | ||
メーカ | InterFET Corporation | ||
ロゴ | |||
このページの下部にプレビューとIFN112ダウンロード(pdfファイル)リンクがあります。 Total 1 pages
D-4
IFN112
N-Channel Silicon Junction Field-Effect Transistor
01/99
¥ Low-Noise, High Gain
¥ Equivalent to Japanese 2SK112
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 50 V
10 mA
360 mW
2.88 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
V(BR)GSS
IGSS
VGS(OFF)
IDSS
Common Source Forward Transconductance gfs
Common Source Input Capacitance
Common Source Reverse Transfer Capacitance
Equivalent Short Circuit Input Noise Voltage
Ciss
Crss
e¯N
IFN112
Min Max
Unit
Process NJ132H
Test Conditions
– 50 V IG = – 1 µA, VDS = ØV
– 0.1 nA VDS = ØV, VGS = – 30V
– 0.25 – 1.2 V VDS = 15V, ID = 100 nA
1.2 9.0 mA VDS = 15V, VGS = ØV
7 34
Typ
12
3
2.5
mS VDS = 15V, VGS = ØV
pF
pF
nV/√Hz
VDS = 15V, VGS = ØV
VDS = 15V, VGS = ØV
VDS = 10V, ID = 5.0 mA
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
TOÐ18 Package
Dimensions in Inches (mm)
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
www.interfet.com
1 Page | |||
ページ | 合計 : 1 ページ | ||
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PDF ダウンロード | [ IFN112 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IFN112 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |