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Número de pieza | IXYH75N65C3H1 | |
Descripción | IGBT | |
Fabricantes | IXYS | |
Logotipo | ||
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No Preview Available ! Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM w/ Sonic
Diode
Extreme Light Punch through
IGBT for 20-60kHz Switching
IXYH75N65C3H1
VCES = 650V
IC110 = 75A
VCE(sat) 2.3V
tfi(typ) = 50ns
Symbol
VCES
VCGR
VGES
VGEM
IICLR25MS
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TTeC rm=in2a5l°CCu(rCrehnipt
Capability)
Limit
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 3
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650
650
±20
±30
V
V
V
V
170 A
160 A
75 A
62 A
360 A
30 A
300 mJ
ICM = 150
VCE VCES
8
A
μs
750
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
International Standard Package
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
Anti-Parallel Sonic Diode
Advantages
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 60A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
50 A
4 mA
100 nA
1.8 2.3 V
2.2 V
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100573A(7/14)
1 page Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
3.5
Eoff Eon - - - -
3 TJ = 150ºC , VGE = 15V
VCE = 400V
2.5
2 I C = 80A
8
7
6
5
1.5 4
13
0.5
I C = 40A
2
01
3 6 9 12 15 18 21 24 27 30 33
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
2.6
Eoff Eon - - - -
2.2 RG = 3ΩVGE = 15V
VCE = 400V
1.8
I C = 80A
1.4
6.5
5.5
4.5
3.5
1.0 2.5
0.6
0.2
25
IC = 40A
50 75 100 125
TJ - Degrees Centigrade
1.5
0.5
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
100 160
90
tfi
td(off) - - - -
150
RG = 3Ω, VGE = 15V
80
VCE = 400V
140
70 130
60 120
50
TJ = 150ºC
110
40
TJ = 25ºC
100
30 90
20 80
10 70
20 25 30 35 40 45 50 55 60 65 70 75 80
IC - Amperes
IXYH75N65C3H1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
2.4
Eoff Eon - - - -
2 RG = 3ΩVGE = 15V
VCE = 400V
1.6
TJ = 150ºC
6
5
4
1.2 3
TJ = 25ºC
0.8 2
0.4 1
00
20 25 30 35 40 45 50 55 60 65 70 75 80
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
110 450
100 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
90 VCE = 400V
400
350
80 300
70 I C = 80A
60
I C = 40A
250
200
50 150
40 100
30 50
3 6 9 12 15 18 21 24 27 30 33
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
100 125
90 t f i
td(off) - - - -
RG = 3Ω, VGE = 15V
80 VCE = 400V
120
115
70 110
60
I C = 80A
105
50 I C = 40A
100
40 95
30 90
20
25
50 75 100 125
TJ - Degrees Centigrade
85
150
© 2013 IXYS CORPORATION, All Rights Reserved
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IXYH75N65C3H1.PDF ] |
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