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PDF IXYH75N65C3D1 Data sheet ( Hoja de datos )
| Número de pieza | IXYH75N65C3D1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM w/ Diode
Extreme Light Punch through
IGBT for 20-60kHz Switching
IXYH75N65C3D1
VCES = 650V
IC110 = 75A
VCE(sat) 2.3V
tfi(typ) = 60ns
Symbol
VCES
VCGR
VGES
VGEM
IICLR25MS
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TTeC rm=in2a5l°CCu(rCrehnipt
Capability)
Limit
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 3
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650
650
±20
±30
V
V
V
V
175 A
160 A
75 A
66 A
360 A
30 A
300 mJ
ICM = 150
VCE VCES
8
A
μs
750
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 60A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
25 A
3 mA
100 nA
1.8 2.3 V
2.2 V
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
International Standard Package
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
Anti-Parallel Fast Diode
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100626A(4/15)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
4.0
3.5 Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
3.0 VCE = 400V
9
8
7
2.5
I C = 80A
2.0
6
5
1.5 4
1.0 I C = 40A
0.5
3
2
0.0
0
5 10 15 20 25 30
RG (Ω)
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
3.0
Eoff Eon - - - -
2.5 RG = 3Ω , VGE = 15V
VCE = 400V
2.0
1
35
6
5
4
1.5 I C = 80A
1.0
3
2
0.5
IC = 40A
0.0
25
50
1
0
75 100 125 150
TJ (ºC)
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
100 160
t f i td(off) - - - -
80 RG = 3Ω , VGE = 15V
VCE = 400V
140
60
TJ = 150ºC
40
TJ = 25ºC
120
100
20 80
0 60
40 45 50 55 60 65 70 75 80
IC (A)
© 2015 IXYS CORPORATION, All Rights Reserved
IXYH75N65C3D1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
2.4 6
Eoff Eon - - - -
2.0 RG = 3Ω , VGE = 15V
VCE = 400V
1.6
5
4
1.2
TJ = 150ºC
0.8
3
2
0.4 TJ = 25ºC
1
0.0 0
40 45 50 55 60 65 70 75 80
IC (A)
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
120 600
t f i td(off) - - - -
100 TJ = 150ºC, VGE = 15V
VCE = 400V
80
500
400
60 I C = 40A, 80A
40
300
200
20 100
00
0 5 10 15 20 25 30 35
RG (Ω)
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
120 180
t f i td(off) - - - -
100 RG = 3Ω , VGE = 15V
VCE = 400V
160
80 140
60 I C = 80A
40
I C = 40A
20
120
100
80
0 60
25 50 75 100 125 150
TJ (ºC)
5 Page | ||
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| PDF Descargar | [ Datasheet IXYH75N65C3D1.PDF ] | |
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