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PDF IXYH50N65C3H1 Data sheet ( Hoja de datos )
| Número de pieza | IXYH50N65C3H1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM w/ Sonic
Diode
Extreme Light Punch Through
IGBT for 20-60kHz Switching
IXYH50N65C3H1
VCES = 650V
IC110 = 50A
VCE(sat) 2.10V
tfi(typ) = 27ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 5
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V
650 V
±20 V
±30 V
130 A
50 A
40 A
250 A
20 A
300 mJ
ICM = 100
VCE VCES
8
A
μs
600
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
36A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
50 A
3 mA
100 nA
1.74
2.00
2.10 V
V
TO-247AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
International Standard Package
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2014 IXYS CORPORATION, All Rights Reserved
DS100572B(7/14)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
2.0
1.8 Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
1.6 VCE = 400V
1.4
I C = 54A
1.2
1.0
0.8
0.6 I C = 36A
0.4
0.2
5
10 15 20 25 30 35 40
RG - Ohms
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
45
Fig. 15. Inductive Switching Energy Loss vs.
1.4 Junction Temperature
Eoff Eon - - - -
1.2 RG = 5Ω , VGE = 15V
VCE = 400V
1.0
I C = 54A
0.8
4.0
3.5
3.0
2.5
0.6 2.0
0.4 1.5
IC = 36A
0.2 1.0
0.0
25
50 75 100 125
TJ - Degrees Centigrade
0.5
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
90 140
80
tfi
td(off) - - - -
130
RG = 5Ω , VGE = 15V
70
VCE = 400V
120
60 110
50
TJ = 150ºC
100
40 90
30 80
20
TJ = 25ºC
70
10 60
0 50
18 22 26 30 34 38 42 46 50 54
IC - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
IXYH50N65C3H1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
1.2
Eoff Eon - - - -
1.0 RG = 5Ω , VGE = 15V
VCE = 400V
0.8
TJ = 150ºC
3.6
3.0
2.4
0.6 1.8
TJ = 25ºC
0.4 1.2
0.2 0.6
0.0 0.0
18 22 26 30 34 38 42 46 50 54
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
80
Gate Resistance
480
t f i td(off) - - - -
70 TJ = 150ºC, VGE = 15V
VCE = 400V
60
400
320
I C = 36A
50
240
40
I C = 54A
30
160
80
20
5
0
10 15 20 25 30 35 40 45
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
70 120
t f i td(off) - - - -
60 RG = 5Ω , VGE = 15V
VCE = 400V
50
I C = 36A
110
100
40 90
30
I C = 54A
20
80
70
10
25
50 75 100 125
TJ - Degrees Centigrade
60
150
5 Page | ||
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| PDF Descargar | [ Datasheet IXYH50N65C3H1.PDF ] | |
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