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PDF IXYH100N65B3 Data sheet ( Hoja de datos )
| Número de pieza | IXYH100N65B3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Advance Technical Information
XPTTM 650V IGBT
GenX3TM
Extreme Light Punch Through
IGBT for 10-30kHz Switching
IXYH100N65B3
VCES = 650V
IC110 = 100A
VCE(sat) 1.85V
tfi(typ) = 73ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 3
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 10, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650
650
±20
±30
V
V
V
V
225 A
160 A
100 A
460 A
50 A
600 mJ
ICM = 200
VCE VCES
8
A
μs
830
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
70A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
25 A
750 A
100 nA
1.53
1.77
1.85 V
V
TO-247
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 10-30kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2014 IXYS CORPORATION, All Rights Reserved
DS100632(10/14)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
7
Eoff Eon - - - -
6 TJ = 150ºC , VGE = 15V
VCE = 400V
5
14
12
10
4 I C = 100A
3
8
6
2 I C = 50A
1
4
2
00
3 6 9 12 15 18 21 24 27 30 33
RG (Ω)
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
7
Eoff Eon - - - -
6 RG = 3Ω , VGE = 15V
VCE = 400V
5
4
IC = 100A
7
6
5
4
33
22
IC = 50A
11
00
25 50 75 100 125 150
TJ (ºC)
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
220 210
200
tfi
td(off) - - - -
200
RG = 3Ω , VGE = 15V
180
VCE = 400V
190
160 180
140 TJ = 150ºC
170
120 160
100 150
80
TJ = 25ºC
60
140
130
40 120
50 55 60 65 70 75 80 85 90 95 100
IC (A)
IXYH100N65B3
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
7
6 Eoff
Eon - - - -
RG = 3Ω , VGE = 15V
5 VCE = 400V
7
6
5
4
TJ = 150ºC
3
4
3
2
1 TJ = 25ºC
2
1
00
50 55 60 65 70 75 80 85 90 95 100
IC (A)
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
240 800
220 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
200 VCE = 400V
700
600
180 500
160
I C = 50A
140
I C = 100A
120
400
300
200
100 100
80 0
3 6 9 12 15 18 21 24 27 30 33
RG (Ω)
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
220 220
200 t f i
td(off) - - - -
180 RG = 3Ω , VGE = 15V
VCE = 400V
160
I C = 50A
210
200
190
140 180
120 170
100
I C = 100A
160
80 150
60 140
40 130
20 120
25 50 75 100 125 150
TJ (ºC)
© 2014 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXYH100N65B3.PDF ] | |
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