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CM100DU-24H の電気的特性と機能

CM100DU-24HのメーカーはMitsubishi Electric Semiconductorです、この部品の機能は「HIGH POWER SWITCHING USE INSULATED TYPE」です。


製品の詳細 ( Datasheet PDF )

部品番号 CM100DU-24H
部品説明 HIGH POWER SWITCHING USE INSULATED TYPE
メーカ Mitsubishi Electric Semiconductor
ロゴ Mitsubishi Electric Semiconductor ロゴ 




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CM100DU-24H Datasheet, CM100DU-24H PDF,ピン配置, 機能
www.DataSheet4U.com
MITSUBISHI IGBT MODULES
CM100DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
TC Measured
Point
E
A
B
FG
H
D
C
C2E1 E2
C1
J
2 - Mounting
Holes
K (6.5 Dia.)
V
3-M5 Nuts
O
P
MN
L
O
QP
TAB#110 t=0.5
S
RT
U
C2E1
E2
E2
G2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions Inches
A 3.7
B 3.15±0.01
C 1.89
D 0.94
E 0.28
F 0.67
G 0.91
H 0.91
J 0.43
K 0.71
L 0.16
Millimeters
94.0
80.0±0.25
48.0
24.0
7.0
17.0
23.0
23.0
11.0
18.0
4.0
Dimensions Inches
Millimeters
M 0.47
12.0
N 0.53 13.5
O 0.1
2.5
P 0.63 16.0
Q 0.98
25.0
R 1.18 +0.04/-0.02 30.0 +1.0/-0.5
S 0.3
7.5
T 0.83 21.2
U 0.16
4.0
V 0.51 13.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
ٗ Low Drive Power
ٗ Low VCE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100DU-24H is a
1200V (VCES), 100 Ampere Dual
IGBT Module.
Type
CM
Current Rating
Amperes
100
VCES
Volts (x 50)
24
Sep.1998

1 Page





CM100DU-24H pdf, ピン配列
MITSUBISHI IGBT MODULES
CM100DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
200
Tj = 25oC
VGE = 20V
160
20
15 12
11
120
10
80
9
40
8
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 100A
IC = 200A
6
4
2
IC = 40A
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
VCC = 600V
VGE = ±15V
RG = 3.1
Tj = 125°C
102
td(off)
tf
td(on)
101 tr
100
100
101
COLLECTOR CURRENT, IC, (AMPERES)
102
TRANSFER CHARACTERISTICS
(TYPICAL)
200
160
VCE = 10V
Tj = 25°C
Tj = 125°C
120
80
40
0
0 4 8 12 16
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
Tj = 25°C
20
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4 Tj = 125°C
3
2
1
0
0 40 80 120 160 200
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. VCE
(TYPICAL)
102
VGE = 0V
102
101
1.0 1.5 2.0 2.5 3.0 3.5 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
di/dt = -200A/µsec
Tj = 25°C
102
trr
102
Irr
101
101 Cies
Coes
100
Cres
10-1
10-1
100
101 102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 100A
16
VCC = 400V
VCC = 600V
12
8
101
100
101
EMITTER CURRENT, IE, (AMPERES)
100
102
4
0
0 100 200 300 400 500
GATE CHARGE, QG, (nC)
Sep.1998


3Pages





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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


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