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SS8050 PDF Data sheet ( 特性 )

部品番号 SS8050
部品説明 Plastic-Encapsulate Transistors
メーカ YS
ロゴ YS ロゴ 


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SS8050 Datasheet, SS8050 PDF,ピン配置, 機能
DATA SHEET
SEMICONDUCTOR
TO-92 Plastic-Encapsulate Transistors
FEATURES
Power dissipation
PCM : 1 W
:2W
(TA=25)
(TC=25)
SS8050
TRANSISTOR (NPN)
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS* TA=25unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
TJ, Tstg
Junction and Storage Temperature
Value
40
25
5
1500
-55-150
123
Units
V
V
V
mA
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
fT
Ic=100uA, IE=0
Ic=0.1mA, IB=0
IE=100µA, IC=0
VCB=40V, IE=0
VCE=20V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=1V, IC=800mA
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
VCE=10V, IC=50mA,f=30MHZ
40
25
5
85
40
100
V
V
V
0.1 µA
0.1 µA
0.1 µA
400
0.5 V
1.2 V
1V
MHz
CLASSIFICATION OF hFE(2)
Rank
B C DE
Range
85-160
120-200
160-300
300-400
http://www.yeashin.com
1
REV.02 20120705

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