|
|
IXYP20N65C3D1MのメーカーはIXYSです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。 |
部品番号 | IXYP20N65C3D1M |
| |
部品説明 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
メーカ | IXYS | ||
ロゴ | |||
このページの下部にプレビューとIXYP20N65C3D1Mダウンロード(pdfファイル)リンクがあります。 Total 6 pages
Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM w/Diode
IXYP20N65C3D1M
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
VCES = 650V
IC110 = 9A
VCE(sat) 2.5V
tfi(typ) = 28ns
Symbol
VCES
VCGR
VGES
VGEM
IICC12150
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TTCC
= 25°C
= 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 20
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V
650 V
±20 V
±30 V
18 A
9A
13 A
105 A
10 A
200 mJ
ICM = 40
VCE VCES
10
A
μs
50
-55 ... +175
175
-55 ... +175
300
260
1.13/10
2.5
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
20A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
400 A
100 nA
2.27
2.44
2.50 V
V
OVERMOLDED TO-220
GCE
Isolated Tab
G = Gate
E = Emitter
C = Collector
Features
Optimized for 20-60kHz Switching
Plastic Overmolded Tab for Electrical
Isolation
Square RBSOA
Avalanche Rated
Anti-Parallel Fast Diode
Short Circuit Capability
International Standard Package
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2013 IXYS CORPORATION, All Rights Reserved
DS100550A(7/14)
1 Page IXYP20N65C3D1M
40
35
30
25
20
15
10
5
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V
12V
11V
10V
9V
8V
7V
0.5 1 1.5 2 2.5 3 3.5 4
VCE - Volts
4.5
40
35
30
25
20
15
10
5
0
0
Fig. 3. Output Characteristics @ TJ = 150ºC
VGE = 15V
14V
13V
12V
11V
10V
9V
8V
7V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
8 Gate-to-Emitter Voltage
TJ = 25ºC
7
6
5
I C = 40A
4
3
20A
2
10A
1
8 9 10 11 12 13 14 15
VGE - Volts
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
100
VGE = 15V
80
14V
13V
60
12V
40 11V
20
0
0
10V
9V
8V
5 10 15 20 25 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
2.0 Junction Temperature
VGE = 15V
1.8
1.6
I C = 40A
1.4
1.2
I C = 20A
1.0
0.8
0.6
-50
I C = 10A
-25 0
25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
60
50
40
30
20
TJ = 150ºC
25ºC
- 40ºC
10
0
4 5 6 7 8 9 10 11 12 13
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
3Pages IXYP20N65C3D1M
Fig. 19. Inductive Turn-on Switching Times vs.
280
Gate Resistance
140
240 t r i
td(on) - - - -
TJ = 150ºC, VGE = 15V
200 VCE = 400V
120
100
160 I C = 40A
120
80
60
80
I C = 20A
40
40 20
00
20 30 40 50 60 70 80 90 100
RG - Ohms
Fig. 21. Inductive Turn-on Switching Times vs.
120 Junction Temperature 34
t r i td(on) - - - -
100 RG = 20Ω , VGE = 15V
VCE = 400V
80
60
30
I C = 40A
26
22
100
90
80
70
60
50
40
30
20
10
0
10
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
t r i td(on) - - - -
RG = 20Ω , VGE = 15V
VCE = 400V
TJ = 25ºC
TJ = 150ºC
15 20 25 30 35
IC - Amperes
30
28
26
24
22
20
18
16
14
12
10
40
40 18
I C = 20A
20 14
0 10
25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 22. Maximum Transient Thermal Impedance for Diode
10
1
0.1
0.0001
0.001
0.01 0.1
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1
10 100
IXYS REF: IXY_20N65C3(3D)7-30-13-A
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ IXYP20N65C3D1M データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IXYP20N65C3D1 | IGBT ( Insulated Gate Bipolar Transistor ) | IXYS |
IXYP20N65C3D1M | IGBT ( Insulated Gate Bipolar Transistor ) | IXYS |