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PDF IXYP10N65B3D1 Data sheet ( Hoja de datos )
| Número de pieza | IXYP10N65B3D1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Advance Technical Information
XPTTM 650V IGBT
GenX3TM w/Diode
IXYP10N65B3D1
Extreme Light Punch Through
IGBT for 5-30kHz Switching
VCES = 650V
IC110 = 10A
VCE(sat) 1.95V
tfi(typ) = 30ns
TO-220
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IIFC1M10
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TC = 110°C
TTCC
= 110°C
= 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 50
Clamped Inductive Load
VGE = 15V, VCE = 400V, TJ = 150°C
RG = 150, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V
650 V
±20 V
±30 V
32 A
10 A
9A
62 A
5A
50 mJ
ICM = 20
@VCE VCES
5
A
μs
160
-55 ... +175
175
-55 ... +175
300
260
1.13/10
2.5
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
10A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
4.0 6.5 V
10 A
350 A
100 nA
1.74
2.00
1.95 V
V
GC E
Tab
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
Optimized for 5-30kHz Switching
Square RBSOA
Avalanche Rated
Anti-Parallel Fast Diode
Short Circuit Capability
International Standard Package
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2016 IXYS CORPORATION, All Rights Reserved
DS100736(6/16)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
1.2
Eoff Eon
1.0 TJ = 150ºC , VGE = 15V
VCE = 400V
0.8
I C = 20A
0.6
2.4
2.0
1.6
1.2
0.4 0.8
0.2
I C = 10A
0.4
0.0 0.0
50 60 70 80 90 100 110 120
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
0.8 1.6
0.7 Eoff
Eon
RG = 50Ω , VGE = 15V
0.6 VCE = 400V
I C = 20A
1.4
1.2
0.5 1.0
0.4 0.8
0.3 0.6
0.2
I C = 10A
0.4
0.1
25
50 75 100
TJ - Degrees Centigrade
125
0.2
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
180 190
160
t f i td(off)
180
140
RG = 50Ω , VGE = 15V
170
VCE = 400V
120 160
100 150
80
TJ = 150ºC
140
60 130
40 120
20
TJ = 25ºC
110
0 100
4 6 8 10 12 14 16 18 20
IC - Amperes
© 2016 IXYS CORPORATION, All Rights Reserved
IXYP10N65B3D1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
0.8
0.7 Eoff
Eon
RG = 50Ω , VGE = 15V
0.6 VCE = 400V
0.5
TJ = 150ºC
1.6
1.4
1.2
1.0
0.4 0.8
0.3 0.6
TJ = 25ºC
0.2 0.4
0.1 0.2
0.0 0.0
4 6 8 10 12 14 16 18 20
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
140 200
130 t f i td(off)
TJ = 150ºC, VGE = 15V
120 VCE = 400V
110 I C = 10A
190
180
170
100 160
90 150
80 140
I C = 20A
70 130
60 120
50 110
50 60 70 80 90 100 110 120
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
160 170
140 t f i
td(off)
RG = 50Ω , VGE = 15V
120 VCE = 400V
I C = 10A
160
150
100 140
80 130
60
I C = 20A
120
40 110
20 100
0 90
25 50 75 100 125 150
TJ - Degrees Centigrade
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