DataSheet.jp

IXYN75N65C3D1 の電気的特性と機能

IXYN75N65C3D1のメーカーはIXYSです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXYN75N65C3D1
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




このページの下部にプレビューとIXYN75N65C3D1ダウンロード(pdfファイル)リンクがあります。

Total 7 pages

No Preview Available !

IXYN75N65C3D1 Datasheet, IXYN75N65C3D1 PDF,ピン配置, 機能
Advance Technical Information
XPTTM 650V IGBT
GenX3TM w/ Diode
IXYN75N65C3D1
Extreme Light Punch through
IGBT for 20-60kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TVISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C (Chip Capability)
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 3
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
50/60Hz
IISOL 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
E
Maximum Ratings
650
650
±20
±30
V
V
V
V
150 A
75 A
60 A
360 A
30 A
300 mJ
ICM = 150
VCE VCES
8
A
μs
600
-55 ... +175
175
-55 ... +175
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in
Nm/lb.in
g
VCES = 650V
IC110 = 75A
VCE(sat)  2.3V
tfi(typ) = 60ns
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
2500V~ Isolation Voltage
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
Anti-Parallel Fast Diode
Advantages
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 60A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
25 A
3 mA
100 nA
1.8 2.3 V
2.2 V
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100661(4/15)

1 Page





IXYN75N65C3D1 pdf, ピン配列
150
120
90
60
30
0
0
150
120
90
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
14V
13V
12V
11V
10V
9V
8V
7V
1234
VCE (V)
Fig. 3. Output Characteristics @ TJ = 150ºC
VGE = 15V
14V
13V
12V
11V
10V
60
9V
30 8V
7V
0 6V
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VCE (V)
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
6
TJ = 25ºC
5
4
3 I C = 120A
2 60A
1 30A
0
8 9 10 11 12 13 14 15
VGE - (V)
IXYN75N65C3D1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
300
VGE = 15V
14V
250
13V
12V
200
11V
150
100 10V
50
0
0
9V
8V
7V
5 10 15
VCE (V)
20
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.2
2.0 VGE = 15V
1.8
1.6 I C = 120A
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
I C = 60A
I C = 30A
25 50 75 100 125 150 175
TJ (ºC)
Fig. 6. Input Admittance
140
120
100
80
60
40
TJ = 150ºC
25ºC
- 40ºC
20
0
4 5 6 7 8 9 10 11
VGE (V)
© 2015 IXYS CORPORATION, All Rights Reserved


3Pages


IXYN75N65C3D1 電子部品, 半導体
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
200 110
180 t r i
td(on) - - - -
160 TJ = 150ºC, VGE = 15V
VCE = 400V
140
100
90
80
120 70
I C = 80A
100 60
80 50
I C = 40A
60 40
40 30
20 20
0 10
0 5 10 15 20 25 30 35
RG ()
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
140 34
t r i td(on) - - - -
120
RG = 3, VGE = 15V
32
VCE = 400V
100 30
I C = 80A
80
28
60 26
40
I C = 40A
20
24
22
0 20
25 50 75 100 125 150
TJ (ºC)
IXYN75N65C3D1
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
120 60
t r i td(on) - - - -
100 RG = 3, VGE = 15V
VCE = 400V
80
50
40
60
TJ = 25ºC, 150ºC
30
40 20
20 10
00
40 45 50 55 60 65 70 75 80
IC (A)
Fig. 22. Maximum Peak Load Current vs. Frequency
100
90
80
70 Triangular Wave
60
50
40
30
20
10
0
10
TJ = 150ºC
TC = 75ºC
VCE = 400V
VGE = 15V
RG = 3
D = 0.5
Square Wave
100
fmax (kHz)
1,000
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

6 Page



ページ 合計 : 7 ページ
 
PDF
ダウンロード
[ IXYN75N65C3D1 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IXYN75N65C3D1

IGBT ( Insulated Gate Bipolar Transistor )

IXYS
IXYS


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap