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PDF IXYN150N60B3 Data sheet ( Hoja de datos )
| Número de pieza | IXYN150N60B3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
600V XPTTM IGBT
GenX3TM
Extreme Light Punch through
IGBT for 10-30kHz Switching
IXYN150N60B3
E
VCES = 600V
IC110 = 130A
VCE(sat) 2.20V
tfi(typ) = 114ns
Symbol
VCES
VCGR
VGES
VGEM
IICLR25MS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TTeC rm=in2a5l°CCu(rCrehnipt
Capability)
Limit
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
50/60Hz
IISOL 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
600
600
±20
±30
V
V
V
V
240 A
200 A
130 A
720 A
75 A
750 mJ
ICM = 300
VCE VCES
8
A
μs
830
-55 ... +175
175
-55 ... +175
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 150A, VGE = 15V, Note 1
TJ = 150°C
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
25 μA
1 mA
±200 nA
1.86
2.26
2.20 V
V
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
Optimized for Low Conduction and
Switching Losses
miniBLOC, with Aluminium Nitride
Isolation
International Standard Package
Isolation Voltage 2500V~
Optimized for 10-30kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100548A(11/13)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
9 Gate Resistance
8 Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
7 VCE = 400V
6
I C = 100A
5
4
3
2 I C = 50A
1
2 4 6 8 10 12 14
RG - Ohms
9
8
7
6
5
4
3
2
1
Fig. 15. Inductive Switching Energy Loss vs.
7 Junction Temperature
Eoff Eon - - - -
6 RG = 2Ω , VGE = 15V
VCE = 400V
5
IC = 100A
8
7
6
45
34
23
IC = 50A
12
01
25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
220
Collector Current
260
200
tfi
td(off) - - - -
240
RG = 2Ω , VGE = 15V
VCE = 400V
180 220
160 200
140
TJ = 150ºC
180
120 160
100
TJ = 25ºC
140
80 120
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
IXYN150N60B3
Fig. 14. Inductive Switching Energy Loss vs.
7 Collector Current
6 Eoff
Eon - - - -
RG = 2Ω , VGE = 15V
5 VCE = 400V
TJ = 150ºC
4
8
7
6
5
3
TJ = 25ºC
4
23
12
01
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
260 Gate Resistance
540
240 t f i
td(off) - - - -
220 TJ = 150ºC, VGE = 15V
VCE = 400V
200
500
460
420
180
I C = 50A
380
160 340
140 300
120
I C = 100A
260
100 220
80 180
60 140
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
220
Junction Temperature
260
200 t f i
td(off) - - - -
RG = 2Ω , VGE = 15V
VCE = 400V
180
240
220
160 I C = 50A
200
140 180
120
I C = 100A
100
160
140
80
25
50 75 100
TJ - Degrees Centigrade
125
120
150
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