PDF IXYN100N120C3H1 Data sheet ( Hoja de datos )

Número de pieza	IXYN100N120C3H1
Descripción	IGBT
Fabricantes	IXYS
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No Preview Available ! 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYN100N120C3H1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 1200 1200 V V ±20 V ±30 V 134 A 62 A 42 A 440 A 50 A 1.2 J ICM = 200 ≤@VCE VCES 690 A W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 Nm/lb.in. 1.3/11.5 Nm/lb.in. 30 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 50 μA 3 mA ±100 nA 2.9 3.5 V 3.9 V SOT-227B, miniBLOC E153432 Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter Features z Optimized for Low Switching Losses z Square RBSOA z Isolation Voltage 2500V~ z Anti-Parallel Ultra Fast Diode z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z High Frequency Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts © 2013 IXYS CORPORATION, All Rights Reserved DS100407A(03/13) 1 page Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 8 7 Eoff Eon - - - - TJ = 125ºC , VGE = 15V 6 VCE = 600V 5 I C = 100A 4 3 2 I C = 50A 1 0 123456789 RG - Ohms 16 14 12 10 8 6 4 2 0 10 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 4.5 Eoff Eon - - - - 4.0 RG = 1Ω , VGE = 15V VCE = 600V 3.5 I C = 100A 3.0 14 12 10 8 2.5 6 2.0 4 I C = 50A 1.5 2 1.0 25 50 75 TJ - Degrees Centigrade 100 0 125 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 170 220 t f i td(off) - - - - 150 RG = 1Ω , VGE = 15V VCE = 600V 130 200 180 110 TJ = 125ºC 160 90 TJ = 25ºC 70 140 120 50 100 50 55 60 65 70 75 80 85 90 95 100 IC - Amperes IXYN100N120C3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 4.5 Eoff Eon - - - - 4.0 RG = 1Ω , VGE = 15V VCE = 600V 3.5 TJ = 125ºC 3.0 14 12 10 8 2.5 6 2.0 TJ = 25ºC 4 1.5 2 1.0 0 50 55 60 65 70 75 80 85 90 95 100 IC - Amperes Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 160 t f i td(off) - - - - 140 TJ = 125ºC, VGE = 15V VCE = 600V 500 400 120 I C = 100A 100 I C = 50A 300 200 80 100 60 0 1 2 3 4 5 6 7 8 9 10 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 170 t f i td(off) - - - - 150 RG = 1Ω , VGE = 15V VCE = 600V 130 220 200 180 110 160 I C = 50A, 100A 90 140 70 120 50 25 50 75 100 TJ - Degrees Centigrade 100 125 © 2013 IXYS CORPORATION, All Rights Reserved 5 Page

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