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PDF IXYK120N120C3 Data sheet ( Hoja de datos )
| Número de pieza | IXYK120N120C3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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1200V XPTTM IGBTs
GenX3TM
High-Speed IGBTs
for 20-50 kHz Switching
Preliminary Technical Information
IXYK120N120C3
IXYX120N120C3
VCES =
IC110 =
V ≤CE(sat)
tfi(typ) =
1200V
120A
3.5V
90ns
TO-264 (IXYK)
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Continuous
Transient
1200
1200
±20
±30
V
V
V
V
TC= 25°C (Chip Capability)
Terminal Current Limit
TC= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 1Ω
Clamped Inductive Load
TC = 25°C
220
160
120
660
60
2
ICM = 240
≤@VCE VCES
1500
-55 ... +175
175
-55 ... +175
A
A
A
A
A
J
A
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300 °C
260 °C
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in.
N/lb.
TO-264
PLUS247
10 g
6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 500μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = IC110, VGE = 15V, Note 1
TJ = 150°C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
25 μA
1.5 mA
±100 nA
2.9 3.5 V
3.8 V
G
C
E
PLUS247 (IXYX)
Tab
G
G
C
E
Tab
G = Gate
C = Collector
E = Emitter
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z International Standard Packages
z Positive Thermal Coefficient of
Vce(sat)
z Avalanche Rated
z High Current Handling Capability
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100451A(03/13)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
9
8 Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
7 VCE = 600V
6
I C = 100A
5
13
12
11
10
9
48
37
2
I C = 50A
6
15
04
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
8
Eoff Eon - - - -
7 RG = 1Ω , VGE = 15V
VCE = 600V
6
5
I C = 100A
14
12
10
8
46
3
I C = 50A
4
22
10
25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
200 280
180
tfi
td(off) - - - -
260
RG = 1Ω , VGE = 15V
160
VCE = 600V
240
140 TJ = 150ºC
120
220
200
100 TJ = 25ºC
80
180
160
60 140
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
IXYK120N120C3
IXYX120N120C3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
7
Eoff Eon - - - -
6 RG = 1Ω , VGE = 15V
VCE = 600V
5
TJ = 150ºC
13
11
9
47
3 TJ = 25ºC 5
23
11
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
200 800
t f i td(off) - - - -
180 TJ = 150ºC, VGE = 15V
VCE = 600V
160
700
600
140
120 I C = 50A
I C = 100A
100
500
400
300
80 200
60 100
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
150 280
140 t f i
td(off) - - - -
RG = 1Ω , VGE = 15V
130 VCE = 600V
I C = 50A
260
240
120 220
110 200
100 I C = 100A 180
90 160
80 140
70
25
50 75 100 125
TJ - Degrees Centigrade
120
150
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| PDF Descargar | [ Datasheet IXYK120N120C3.PDF ] | |
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