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PDF HRI105N15H Data sheet ( Hoja de datos )
| Número de pieza | HRI105N15H | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | SemiHow | |
| Logotipo |  |
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Fab 2016
HRW105N15H/HRI105N15H
150V N-Channel Trench MOSFET
Features
High Speed Power Switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
Lead free, Halogen Free
Application
Synchronous Rectification in SMPS
Hard Switching and High Speed Circuit
Power Tools
UPS & Motor Control
Key Parameters
Parameter
BVDSS
ID
RDS(on), typ
Value
150
120
8.8
Unit
V
A
Pȍ
Package & Internal Circuit
D2-PAK
(HRW105N15H)
D
I2-PAK
(HRI105N15H)
D
G
S
G
D
S
Absolute Maximum Ratings TJ=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TC = 25
TC = 100
Single Pulsed Avalanche Energy
L=0.4mH
Power Dissipation
TC = 25
Operating and Storage Temperature Range
150
ρ20
120
85
400
845
333
-55 to +175
Units
V
V
A
A
A
mJ
W
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
0.45
62.5
Units
/W
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͷΒΓ͑ͣͧ͑͢͡
1 page  
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
.ȍ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
BVDSS
IAS
EAS =
--1--
2
LL IAS2
ID (t)
DUT
VDD
tp
VDS (t)
Time
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͷΒΓ͑ͣͧ͑͢͡
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HRI105N15H.PDF ] | |
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