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PDF HRLI43N06H Data sheet ( Hoja de datos )
| Número de pieza | HRLI43N06H | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | SemiHow | |
| Logotipo |  |
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April 2016
HRLI43N06H
60V N-Channel Trench MOSFET
Features
High Speed Power Switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
Lead free, Halogen Free
Application
Synchronous Rectification in SMPS
Hard Switching and High Speed Circuit
Power Tools
UPS, Motor Control
Key Parameters
Parameter
BVDSS
ID
RDS(on), typ @10V
RDS(on), typ @4.5V
Value
60
140
3.6
4.6
Unit
V
A
Pȍ
Pȍ
Package & Internal Circuit
I2-PAK
G
D
S
Absolute Maximum Ratings TJ=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TC = 25
TC = 100
Single Pulsed Avalanche Energy
L=0.1mH
Power Dissipation
TC= 25
Operating and Storage Temperature Range
60
ρ20
140
100
410
211
176
-55 to +175
Units
V
V
A
A
A
mJ
W
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
0.85
62.5
Units
/W
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͧ͑͢͡
1 page  
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
.ȍ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
BVDSS
IAS
EAS =
--1--
2
LL IAS2
ID (t)
DUT
VDD
tp
VDS (t)
Time
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͧ͑͢͡
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HRLI43N06H.PDF ] | |
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