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P75N06 の電気的特性と機能

P75N06のメーカーはCETです、この部品の機能は「CEP75N06」です。


製品の詳細 ( Datasheet PDF )

部品番号 P75N06
部品説明 CEP75N06
メーカ CET
ロゴ CET ロゴ 




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P75N06 Datasheet, P75N06 PDF,ピン配置, 機能
CEP75N06/CEB75N06
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 87A, RDS(ON) = 12m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS 60
VGS ±20
87
ID 61
IDM 348
200
PD 1.3
EAS
IAS
TJ,Tstg
325
50
-55 to 175
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 5. 2010.Nov.
http://www.cetsemi.com

1 Page





P75N06 pdf, ピン配列
CEP75N06/CEB75N06
180
VGS=10,9,8,7V
150
120
VGS=6V
90
60 VGS=5V
30
0
0123456
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
140
25 C
105
70
TJ=125 C
35
-55 C
0
0 2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
4800
4000
3200
Ciss
2400
1600
800 Coss
0 Crss
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.6
ID=50A
2.2 VGS=10V
1.8
1.4
1.0
0.6
0.2
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3


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