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PDF A2I20D020GNR1 Data sheet ( Hoja de datos )
| Número de pieza | A2I20D020GNR1 | |
| Descripción | RF LDMOS Wideband Integrated Power Amplifiers | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
Document Number: A2I20D020N
Rev. 0, 5/2016
RF LDMOS Wideband Integrated
Power Amplifiers
The A2I20D020N wideband integrated circuit is designed with on--chip
matching that makes it usable from 1400 to 2200 MHz. This multi--stage
structure is rated for 20 to 32 V operation and covers all typical cellular base
station modulation formats.
1800–2200 MHz
Typical Single--Carrier W--CDMA Characterization Performance:
VDD = 28 Vdc, IDQ1(A+B) = 32 mA, IDQ2(A+B) = 110 mA, Pout = 2.5 W Avg.,
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency
Gps
(dB)
PAE
(%)
1800 MHz
31.0 19.7
1900 MHz
31.0 21.7
2000 MHz
31.1 22.1
2100 MHz
31.4 21.1
2200 MHz
32.0 19.6
1. All data measured in fixture with device soldered to heatsink.
ACPR
(dBc)
–44.3
–45.0
–45.2
–45.2
–44.8
Features
Extremely Wide RF Bandwidth
RF Decoupled Drain Pins Reduce Overall Board Space
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (2)
A2I20D020NR1
A2I20D020GNR1
1400–2200 MHz, 2.5 W AVG., 28 V
AIRFAST RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
TO--270WB--17
PLASTIC
A2I20D020NR1
TO--270WBG--17
PLASTIC
A2I20D020GNR1
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF. Select Documentation/Application Notes -- AN1977 or AN1987.
Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
A2I20D020NR1 A2I20D020GNR1
1
1 page  
VDD1A
VGG1A
R2
VGG2A
R1
C5
R5
Z1
C6
R3
VGG1B
R4
VGG2B
D77506
VDD1B
C7 C9
C11
Q1
C12
C8 C10
VDD2A
C17
C15
A2I20D020N
Rev. 4
C13
C3
C4
C14
C16
C18
VDD2B
C1 Z2
C2
R6
Note: All data measured in fixture with device soldered to heatsink. Production fixture does not include device
soldered to heatsink.
Figure 3. A2I20D020NR1 Test Circuit Component Layout
Table 7. A2I20D020NR1 Test Circuit Component Designations and Values
Part
Description
Part Number
C1, C2
3.9 pF Chip Capacitors
ATC600F3R9BT250XT
C3, C4
0.5 pF Chip Capacitors
ATC600F0R5BT250XT
C5, C6, C7, C8
4.7 F Chip Capacitors
GRM31CR71H475KA12L
C9, C10, C11, C12, C13,
C14, C15, C16, C17, C18
10 F Chip Capacitors
GRM31CR61H106KA12L
Q1
RF LDMOS Power Amplifier
A2I20D020N
R1, R2, R3, R4
4.7 k, 1/4 W Chip Resistors
CRCW12064K70FKEA
R5, R6
50 , 10 W Chip Resistors
060120A15Z50-2
Z1, Z2
1700–2300 MHz, 90, 3 dB Hybrid Couplers
X3C19P1-03S
PCB
Rogers RO4350B, 0.020, r = 3.66
D77506
Manufacturer
ATC
ATC
Murata
Murata
NXP
Vishay
Anaren
Anaren
MTL
RF Device Data
Freescale Semiconductor, Inc.
A2I20D020NR1 A2I20D020GNR1
5
5 Page 
P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
20
39 39.5
15
E
10
5
41.5 P
0
–5
40
40.5
41
20
15
60 E
10
58
5 56
0P
54
–5
52 50
48 46
–10
10
20 30 40
REAL ()
50
Figure 16. P3dB Load Pull Output Power Contours (dBm)
–10
10
20 30
REAL ()
40
50
Figure 17. P3dB Load Pull Efficiency Contours (%)
20
33
15
E 32.5
32
10
31.5
5
P
0
31
30.5
–5
29.5
–10
10 20
30
REAL ()
30
40
50
Figure 18. P3dB Load Pull Gain Contours (dB)
20
15
–12 E
10
–10
5
0P
–8
–5
–8
–6
–2
–4
–10
10
20 30 40
REAL ()
50
Figure 19. P3dB Load Pull AM/PM Contours ()
Gain
Drain Efficiency
Linearity
Output Power
NOTE: P = Maximum Output Power
E = Maximum Drain Efficiency
RF Device Data
Freescale Semiconductor, Inc.
A2I20D020NR1 A2I20D020GNR1
11
11 Page | ||
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