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A2I20D020NR1 の電気的特性と機能

A2I20D020NR1のメーカーはFreescale Semiconductorです、この部品の機能は「RF LDMOS Wideband Integrated Power Amplifiers」です。


製品の詳細 ( Datasheet PDF )

部品番号 A2I20D020NR1
部品説明 RF LDMOS Wideband Integrated Power Amplifiers
メーカ Freescale Semiconductor
ロゴ Freescale Semiconductor ロゴ 




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A2I20D020NR1 Datasheet, A2I20D020NR1 PDF,ピン配置, 機能
Freescale Semiconductor
Technical Data
Document Number: A2I20D020N
Rev. 0, 5/2016
RF LDMOS Wideband Integrated
Power Amplifiers
The A2I20D020N wideband integrated circuit is designed with on--chip
matching that makes it usable from 1400 to 2200 MHz. This multi--stage
structure is rated for 20 to 32 V operation and covers all typical cellular base
station modulation formats.
1800–2200 MHz
Typical Single--Carrier W--CDMA Characterization Performance:
VDD = 28 Vdc, IDQ1(A+B) = 32 mA, IDQ2(A+B) = 110 mA, Pout = 2.5 W Avg.,
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency
Gps
(dB)
PAE
(%)
1800 MHz
31.0 19.7
1900 MHz
31.0 21.7
2000 MHz
31.1 22.1
2100 MHz
31.4 21.1
2200 MHz
32.0 19.6
1. All data measured in fixture with device soldered to heatsink.
ACPR
(dBc)
–44.3
–45.0
–45.2
–45.2
–44.8
Features
Extremely Wide RF Bandwidth
RF Decoupled Drain Pins Reduce Overall Board Space
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (2)
A2I20D020NR1
A2I20D020GNR1
1400–2200 MHz, 2.5 W AVG., 28 V
AIRFAST RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
TO--270WB--17
PLASTIC
A2I20D020NR1
TO--270WBG--17
PLASTIC
A2I20D020GNR1
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF. Select Documentation/Application Notes -- AN1977 or AN1987.
Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
A2I20D020NR1 A2I20D020GNR1
1

1 Page





A2I20D020NR1 pdf, ピン配列
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Stage 1 -- Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
1 Adc
Gate--Source Leakage Current
(VGS = 1.0 Vdc, VDS = 0 Vdc)
Stage 1 -- On Characteristics
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 2 Adc)
IGSS
1 Adc
VGS(th)
0.8
1.2
1.6 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1(A+B) = 32 mAdc)
VGS(Q)
1.9
Vdc
Fixture Gate Quiescent Voltage
VGG(Q)
7.5
8.2
9.0 Vdc
(VDD = 28 Vdc, IDQ1(A+B) = 32 mAdc, Measured in Functional Test)
Stage 2 -- Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
1 Adc
Gate--Source Leakage Current
(VGS = 1.0 Vdc, VDS = 0 Vdc)
IGSS
1 Adc
Stage 2 -- On Characteristics
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 11 Adc)
VGS(th)
0.8
1.2
1.6 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2(A+B) = 110 mAdc)
VGS(Q)
1.8
Vdc
Fixture Gate Quiescent Voltage
VGG(Q)
4.1
4.8
5.6 Vdc
(VDD = 28 Vdc, IDQ2(A+B) = 110 mAdc, Measured in Functional Test)
Drain--Source On--Voltage (1)
(VGS = 10 Vdc, ID = 200 mAdc)
VDS(on)
0.1
0.3
1.5 Vdc
1. Each side of device measured separately.
(continued)
RF Device Data
Freescale Semiconductor, Inc.
A2I20D020NR1 A2I20D020GNR1
3


3Pages


A2I20D020NR1 電子部品, 半導体
Table 8. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ1 = 16 mA, IDQ2 = 57 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
f
(MHz)
1805
Zsource
()
92.7 + j84.9
Zin
()
72.9 – j80.3
Zload (1)
()
21.8 – j4.48
Gain (dB)
31.6
P1dB
(dBm)
40.6
(W)
11
1840
70.5 + j83.3
62.6 – j79.4
19.0 – j6.17
31.4
40.6 11
1880
53.3 + j79.4
50.7 – j74.5
17.9 – j5.52
31.3
40.6 12
Max Output Power
f
(MHz)
1805
Zsource
()
92.7 + j84.9
Zin
()
71.2 – j79.5
Zload (2)
()
20.1 – j7.48
Gain (dB)
29.3
P3dB
(dBm)
41.5
(W)
14
1840
70.5 + j83.3
61.5 – j78.8
18.5 – j6.91
29.3
41.5 14
1880
53.3 + j79.4
50.1 – j73.8
17.5 – j6.54
29.2
41.5 14
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Note: Measurement made on a per side basis.
Table 9. Load Pull Performance — Maximum Efficiency Tuning
VDD = 28 Vdc, IDQ1 = 16 mA, IDQ2 = 57 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
f
(MHz)
1805
Zsource
()
92.7 + j84.9
Zin
()
73.1 – j84.4
Zload (1)
()
41.8 + j7.22
Gain (dB)
32.9
P1dB
(dBm)
39.0
(W)
8
1840
70.5 + j83.3
62.4 – j82.2
32.6 + j4.15
32.6
39.4 9
1880
53.3 + j79.4
50.5 – j77.9
26.6 + j12.0
33.0
38.8 8
Max Drain Efficiency
f
(MHz)
1805
Zsource
()
92.7 + j84.9
Zin
()
72.6 – j82.9
Zload (2)
()
41.0 + j3.98
Gain (dB)
30.8
P3dB
(dBm)
40.0
(W)
10
1840
70.5 + j83.3
62.5 – j81.6
30.9 + j5.87
30.6
40.3 11
1880
53.3 + j79.4
50.2 – j76.9
30.1 + j10.2
30.9
39.7 9
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Note: Measurement made on a per side basis.
D
(%)
54.5
52.5
51.6
AM/PM
()
–3
–3
–3
D
(%)
53.7
52.8
51.8
AM/PM
()
–6
–6
–5
D
(%)
61.7
59.9
57.5
AM/PM
()
–5
–4
–5
D
(%)
61.1
59.8
58.1
AM/PM
()
–8
–7
–6
Input Load Pull
Tuner and Test
Circuit
Zsource Zin
Device
Under
Test
Output Load Pull
Tuner and Test
Circuit
Zload
A2I20D020NR1 A2I20D020GNR1
6
RF Device Data
Freescale Semiconductor, Inc.

6 Page



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部品番号部品説明メーカ
A2I20D020NR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor
Freescale Semiconductor


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