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PDF ACE7409B Data sheet ( Hoja de datos )
| Número de pieza | ACE7409B | |
| Descripción | P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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ACE7409B
P-Channel 30-V (D-S) MOSFET
Description
The ACE7409B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This
device is suitable for use as a high side switch in SMPS and general purpose applications.
Features
VDS (V) = -30 V
ID =-30A (at VGS=-10V)
< 14mΩ (VGS=-10V)
< 20mΩ (VGS=-4.5V)
Packaging Type
Ordering information
ACE7333M XX + H
Halogen - free
Pb - free
NN : DFN3*3-8L
Absolute Maximum Ratings @TA=25℃ unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)a
TA=25 OC
TA=70 OC
Drain Current (Pulse)c
Power Dissipation b
TA=25 OC
TA=70 OC
Operating Temperature/ Storage Temperature
Symbol
VDSS
VGSS
ID
IDM
PD
TJ,TSTG
Limit
30
±20
30
22
82
25
16
-55 to 150
Units
V
V
A
W
OC
VER 1.1 1
1 page  
Packing Information
DFN3*3-8L
ACE7409B
P-Channel 30-V (D-S) MOSFET
DFN3*3-8L
Symbol
A
A1
A2
D
D1
E
E1
E2
b
e
L
L1
L2
L3
H
θ
Dimensions In Millimeters
MIN MAX
0.650
0.850
0.152REF
0~0.05
2.900
3.100
2.300
2.600
2.900
3.100
3.150
3.450
1.535
1.935
0.200
0.400
0.50 0.750
0.300
0.500
0.180
0.480
0~0.100
0~0.100
0.315
0.515
9O 13O
Dimensions In Inches
MIN MAX
0.026
0.033
0.006REF
0~0.002
0.114
0.122
0.09 0.102
0.114
0.122
0.124
0.136
0.060
0.076
0.008
0.016
0.022
0.030
0.012
0.020
0.007
0.019
0~0.004
0~0.004
0.012
0.020
9 O 13O
VER 1.1 5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet ACE7409B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ACE7409B | P-Channel 30-V (D-S) MOSFET | ACE Technology |
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