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ACE4940M の電気的特性と機能

ACE4940MのメーカーはACE Technologyです、この部品の機能は「Dual N-Channel 40-V MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 ACE4940M
部品説明 Dual N-Channel 40-V MOSFET
メーカ ACE Technology
ロゴ ACE Technology ロゴ 




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ACE4940M Datasheet, ACE4940M PDF,ピン配置, 機能
ACE4940M
Dual N-Channel 40-V MOSFET
Description
The ACE4940M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25
TA=70
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25
TA=70
Operating temperature / storage temperature
Symbol Limit Units
VDS 40 V
VGS ±20 V
8.3
ID
A
6.8
IDM 50 A
IS 3 A
2.1
PD
W
1.3
TJ/TSTG -55~150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
62.5
110
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.2 1

1 Page





ACE4940M pdf, ピン配列
ACE4940M
Dual N-Channel 40-V MOSFET
Electrical Characteristics
TA=25, unless otherwise specified.
Parameter
Symbol
Gate-Source Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current IDSS
On-State Drain Current
Drain-Source On-Resistance
ID(on)
RDS(ON)
Forward Transconductance
Diode Forward Voltage
gFS
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±20 V
VDS = 32 V, VGS = 0 V
VDS = 32 V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 6.6A
VGS = 4.5 V, ID =5.9 A
VDS = 15 V, ID = 6.6 A
IS = 1.5 A, VGS = 0 V
Dynamic
VDS = 20 V, VGS = 4.5 V, ID =6.6 A
VDS = 20 V, RL = 3 Ω, ID = 6.6 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 MHz
Min Typ Max Unit
1V
±100 nA
1
uA
25
4.1 A
22
27
40 S
0.7 V
19
5.7
9.2
9
17
59
26
1309
250
151
nC
ns
pF
Note :
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing
VER 1.2 3


3Pages


ACE4940M 電子部品, 半導体
Packing Information
SOP-8
ACE4940M
Dual N-Channel 40-V MOSFET
MILLMETERS
DIM
MIN NOM MAX
A 1.35 1.55 1.75
A(1) 0.10 0.18 0.25
B 0.38 0.45 0.51
C 0.19 0.22 0.25
D 4.80 4.90 5.00
E 3.80 3.90 4.00
e 1.27 BSC
H 5.8 6.00 6.20
L 0.50 0.72 0.93
a 00 40 80
h 0.25 0.38 0.50
Unit: mm
VER 1.2 6

6 Page



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共有リンク

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部品番号部品説明メーカ
ACE4940M

Dual N-Channel 40-V MOSFET

ACE Technology
ACE Technology


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