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ACE4940MのメーカーはACE Technologyです、この部品の機能は「Dual N-Channel 40-V MOSFET」です。 |
部品番号 | ACE4940M |
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部品説明 | Dual N-Channel 40-V MOSFET | ||
メーカ | ACE Technology | ||
ロゴ | |||
このページの下部にプレビューとACE4940Mダウンロード(pdfファイル)リンクがあります。 Total 7 pages
ACE4940M
Dual N-Channel 40-V MOSFET
Description
The ACE4940M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃
TA=70℃
Operating temperature / storage temperature
Symbol Limit Units
VDS 40 V
VGS ±20 V
8.3
ID
A
6.8
IDM 50 A
IS 3 A
2.1
PD
W
1.3
TJ/TSTG -55~150 ℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
62.5
110
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.2 1
1 Page ACE4940M
Dual N-Channel 40-V MOSFET
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Gate-Source Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current IDSS
On-State Drain Current
Drain-Source On-Resistance
ID(on)
RDS(ON)
Forward Transconductance
Diode Forward Voltage
gFS
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±20 V
VDS = 32 V, VGS = 0 V
VDS = 32 V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 6.6A
VGS = 4.5 V, ID =5.9 A
VDS = 15 V, ID = 6.6 A
IS = 1.5 A, VGS = 0 V
Dynamic
VDS = 20 V, VGS = 4.5 V, ID =6.6 A
VDS = 20 V, RL = 3 Ω, ID = 6.6 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 MHz
Min Typ Max Unit
1V
±100 nA
1
uA
25
4.1 A
22
mΩ
27
40 S
0.7 V
19
5.7
9.2
9
17
59
26
1309
250
151
nC
ns
pF
Note :
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing
VER 1.2 3
3Pages Packing Information
SOP-8
ACE4940M
Dual N-Channel 40-V MOSFET
MILLMETERS
DIM
MIN NOM MAX
A 1.35 1.55 1.75
A(1) 0.10 0.18 0.25
B 0.38 0.45 0.51
C 0.19 0.22 0.25
D 4.80 4.90 5.00
E 3.80 3.90 4.00
e 1.27 BSC
H 5.8 6.00 6.20
L 0.50 0.72 0.93
a 00 40 80
h 0.25 0.38 0.50
Unit: mm
VER 1.2 6
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ ACE4940M データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
ACE4940M | Dual N-Channel 40-V MOSFET | ACE Technology |