Datasheet 10N80 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	10N80	N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 10N80 ·FEATURES ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Req	Inchange Semiconductor	mosfet
2	10N80	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N80 800V N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load	Unisonic Technologies	mosfet
3	10N80	N-Channel Power MOSFET, Transistor SEMICONDUCTOR 10N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 10A, 800Volts DESCRIPTION The Nell 10N80 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V, and max. thre	nELL	mosfet

10N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	10N03L	IPP10N03L IPP10N03L IPB10N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance	Infineon Technologies AG	data
2	10N120BND	HGTG10N120BND Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipol	Fairchild Semiconductor	data
3	10N15	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N15 Preliminary 10A, 150V, 0.3Ω, N-CHANNEL POWER MOSFETS  DESCRIPTION The UTC 10N15 is an N-channel enhancement mode silicon-gate power field effect transistors, it uses UTC’s advanced technology to provide the customers with high breakdown voltage etc. The	Unisonic Technologies	mosfet
4	10N20	FQB10N20 www.datasheet4u.com ! "	Fairchild Semiconductor	data
5	10N20C	FQP10N20C FQP10N20C/FQPF10N20C QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially ta	Fairchild Semiconductor	data
6	10N30	300V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a	Unisonic Technologies	mosfet
7	10N361K	JVR10N361K METAL OXIDE VARISTOR 10mm Disc Maximum Allowable Voltage Part Number Acrms JVR10N180M87orr JVR10N220L87orr JVR10N270K87orr JVR10N330K87orr JVR10N390K87orr JVR10N470K87orr JVR10N560K87orr JVR10N680K87orr JVR10N820K87orr JVR10N101K87orr JVR10N121K87orr JVR10N151K87orr JVR10N181K87orr JVR10N201K87orr J	RFE international	data

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Número de pieza	Descripción	Fabricantes	PDF
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