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IXKP13N60C5M PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXKP13N60C5M
部品説明 CoolMOS Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXKP13N60C5M Datasheet, IXKP13N60C5M PDF,ピン配置, 機能
IXKP 13N60C5M
CoolMOS™ 1) Power MOSFET
Fully isolated package
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge
Preliminary data
D
G
S
ID25 = 6.5 A
VDSS
= 600 V
R =DS(on) max 0.3 Ω
TO-220 FP
G
D
S
MOSFET
Symbol
VDSS
VGS
ID25
ID90
EAS
EAR
dV/dt
Conditions
TVJ = 25°C
TC = 25°C
TC = 90°C
single pulse
repetitive
ID = 4.4 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings
600 V
± 20 V
6.5 A
4.5 A
290 mJ
0.44 mJ
50 V/ns
Symbol
RDSon
VGS(th)
IDSS
IGSS
Ciss
Coss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = 6.6 A
VDS = VGS; ID = 0.44 mA
VDS = 600 V; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
VGS = 0 V; VDS = 100 V
f = 1 MHz
TVJ = 25°C
TVJ = 125°C
VGS = 0 to 10 V; VDS = 400 V; ID = 6.6 A
VGS = 10 V; VDS = 400 V
ID = 6.6 A; RG = 4.3 Ω
270
2.5 3
10
1100
60
22
5
7.6
10
5
40
5
300 mΩ
3.5 V
1 µA
µA
100 nA
pF
pF
30 nC
nC
nC
ns
ns
ns
ns
3.85 K/W
Features
• fast CoolMOS™ 1) power MOSFET
4th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
1) CoolMOSis a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209d
1-4

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