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AWB7122のメーカーはANADIGICSです、この部品の機能は「Small-Cell Power Amplifier Module」です。 |
部品番号 | AWB7122 |
| |
部品説明 | Small-Cell Power Amplifier Module | ||
メーカ | ANADIGICS | ||
ロゴ | |||
このページの下部にプレビューとAWB7122ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
FEATURES
• InGaP HBT Technology
• -47 dBc ACPR @ + 10 MHz, +24.5 dBm
• 30 dB Gain
• High Efficiency
• Low Transistor Junction Temperature
• Internally matched for a 50 Ω System
• Low Profile Miniature Surface Mount Package;
Halogen Free and RoHS Compliant
• Multi-Carrier Capability
APPLICATIONS
• LTE, WCDMA and HSDPA Air Interfaces
• Picocell, Femtocell, Home Nodes
• Customer Premises Equipment (CPE)
• Data Cards and Terminals
AWB7122
1805 MHz to 1880 MHz
Small-Cell Power Amplifier Module
DATA SHEET - Rev 2.3
14 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWB7122 is a highly linear, fully matched, power
amplifier module designed for picocell, femtocell, and
customer premises equipment (CPE) applications.
Its high power efficiency and low adjacent channel
power levels meet the extremely demanding needs
of small cell infrastructure architectures. Designed
for LTE, WCDMA, HSDPA air interfaces operating
in the 1805 MHz to 1880 MHz band, the AWB7122
delivers up to +24.5 dBm of LTE (E-TM1.1) power with
Su p p ly
Vo lta g e
an ACPR of -47 dBc. It operates from a convenient
+4.2 V supply and provides 30 dB of gain. The
device is manufactured using an advanced InGaP
HBT MMIC technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
The self-contained 7 mm x 7 mm x 1.3 mm surface
mount package incorporates RF matching networks
optimized for output power, efficiency, and linearity in
a 50 Ω system.
Su p p ly
Vo lta g e
RF
In p u t
M a tch in g
Ne two r k
Bia s
Co n tr o l
M a tch in g
Ne two r k
Po we r
De te cto r
RF
Ou tp u t
Bia s
Vo lta g e
De te cto r
Ou tp u t
Figure 1: Block Diagram
05/2015
1 Page AWB7122
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN MAX UNIT
Supply Voltage (VCC)
0 +5
V
Reference Voltage (VREF)
0 +3.5
V
RF Output Power (POUT)
-
+28
dBm,
modulated
RF Input Power (PIN)
- +10 dBm, CW
ESD Rating
Human Body Model (1)
Charged Device Model (2)
Class 1C
Class IV
-
-
MSL Rating (3)
4-
Junction Temperature (TJ)
- +150 °C
Storage Temperature (TSTG)
-40 +150
°C
Functional operation is not implied under these conditions. Exceeding any
one or a combination of the Absolute Maximum Rating Conditions may cause
permanent damage to the device. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
Notes:
(1) JEDEC JS-001-2010.
(2) JEDEC JESD22-C101D.
(3) 260 °C peak reflow.
Table 3: Operating Ranges
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Operating Frequency (f)
1805
- 1880 MHz
Supply Voltage (VCC)
+3.2 +4.2 +4.5
V
Reference Voltage (VREF)
+2.80 +2.85 +2.90
0 - +0.5
V
PA "on"
PA "shut down"
RF Output Power (POUT) (1)
-
+24.5
-
dBm
Case Temperature (TC) (2)
-40 - +85 °C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) Typ RF Output Power is used during production test.
(2) Case Temperature references the board temperature at the ground paddle on the backside of the package.
3
DATA SHEET - Rev 2.3
05/2015
3Pages AWB7122
1
2
3
Figure 4: PCB Footprint
6
DATA SHEET - Rev 2.3
05/2015
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ AWB7122 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AWB7122 | Small-Cell Power Amplifier Module | ANADIGICS |
AWB7123 | Small-Cell Power Amplifier Module | ANADIGICS |
AWB7124 | Small-Cell Power Amplifier Module | ANADIGICS |
AWB7125 | Small-Cell Power Amplifier Module | ANADIGICS |