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Datasheet 6N80 PDF ( 特性, スペック, ピン接続図 )

部品番号 6N80
部品説明 N-CHANNEL POWER MOSFET
メーカ UTC
ロゴ UTC ロゴ 
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6N80 Datasheet, 6N80 PDF,ピン配置, 機能
6N80
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
6A, 800V N-CHANNEL
POWER MOSFET
1
„ DESCRIPTION
The UTC 6N80 is a N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 6N80 is universally applied in high efficiency switch
mode power supply.
1
1
Power MOSFET
TO-220
TO-220F
TO-220F1
„ FEATURES
* RDS(on) = 2.0@VGS = 10 V
* Improved dv/dt capability
* Fast switching
* 100% avalanche tested
„ SYMBOL
2.Drain
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N80L-TA3-T
6N80G-TA3-T
6N80L-TF3-T
6N80G-TF3-T
6N80L-TF1-T
6N80G-TF1-T
Note: Pin Assignment: G: Gate D: Drain
Package
TO-220
TO-220F
TO-220F1
S: Source
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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6N80 pdf, ピン配列
6N80
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
ID=250µA, VGS=0V
BVDSS/TJ Reference to 25°C, ID=250µA
IDSS
VDS=800V, VGS=0V
VDS=640V, TC=125°C
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=3A
VDS=50V, ID=3A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V,
f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=640V, ID=6A
(Note 1, 2)
VDD=400V, ID=6A, RG=25
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=6A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=6A, VGS=0V,
QRR dIF/dt=100A/µs (Note 1)
Note: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
800 V
0.97 V/°C
10
100
µA
100 nA
-100 nA
3.0 5.0
1.6 2.0
5.4
V
S
1010 1310 pF
90 115 pF
8 11 pF
21 30 nC
6 nC
9 nC
26 60 ns
65 140 ns
47 105 ns
44 90 ns
6A
22 A
1.4 V
615 ns
5.4 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N80 電子部品, 半導体
6N80
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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