DataSheet.jp


Datasheet 6N50 PDF ( 特性, スペック, ピン接続図 )

部品番号 6N50
部品説明 N-CHANNEL POWER MOSFET
メーカ UTC
ロゴ UTC ロゴ 
プレビュー
Total 6 pages
		
11

No Preview Available !

6N50 Datasheet, 6N50 PDF,ピン配置, 機能
6N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
6A, 500V N-CHANNEL
POWER MOSFET
Power MOSFET
„ DESCRIPTION
The UTC 6N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 6N50 is generally applied in high efficiency switch mode
power supplies, active power factor correction and electronic lamp
ballasts based on half bridge topology.
„ FEATURES
* VDS = 500V
* ID = 6A
* RDS(ON)=1.15@ VGS=10V
* High Switching Speed
* 100% Avalanche Tested
„ SYMBOL
2.Drain
1 TO-220
1
TO-220F
1.Gate
3.Source
„ ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
6N50L-TA3-T
6N50G-TA3-T
6N50L-TF3-T
6N50G-TF3-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-526.b

1 Page



6N50 pdf, ピン配列
6N50
Preliminary
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=3A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=400V, ID=6A
(Note 1, 2)
VDD=250V, ID=6A, RG=25
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=6A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR IS=6A, VGS=0V, dIF/dt=100A/µs
QRR (Note 1)
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
500 V
10 µA
+100 nA
-100 nA
2.0 4.0 V
0.95 1.15
720 960
85 115
6.3 10
pF
pF
pF
15 20 nC
4.5 nC
6 nC
17 45 ns
30 70 ns
35 80 ns
20 50 ns
6
24
1.5
85
0.15
A
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-526.b


3Pages


6N50 電子部品, 半導体
6N50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
QW-R502-526.b

6 Page





ページ 合計 : 6 ページ
PDF
ダウンロード
[ 6N50.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
6N50

There is a function of N-CHANNEL POWER MOSFET.

UTC
UTC
6N50

There is a function of N-Channel MOSFET Transistor.

Inchange Semiconductor
Inchange Semiconductor
6N55

There is a function of N-Channel MOSFET Transistor.

Inchange Semiconductor
Inchange Semiconductor

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC
FDMS86368

N-Channel Power Trench, 80V, 80A, 4.5mΩ.

Fairchild
Fairchild
2SC2456

Here is a Color TV Horizontal Driver, Vceo=300V, TO-126 Package.

Toshiba
Toshiba

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap