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Datasheet RJH65T47DPQ-A0 PDF ( 特性, スペック, ピン接続図 )

部品番号 RJH65T47DPQ-A0
部品説明 IGBT
メーカ Renesas
ロゴ Renesas ロゴ 
プレビュー
Total 10 pages
		
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RJH65T47DPQ-A0 Datasheet, RJH65T47DPQ-A0 PDF,ピン配置, 機能
Preliminary Datasheet
RJH65T47DPQ-A0
650V - 45A - IGBT
Application: Power Factor Correction circuit
R07DS1291EJ0101
Rev.1.01
Oct 22, 2015
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology (G7H series)
High speed switching
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 45 A, Rg = 10 , Ta = 25°CInductive load)
Operation frequency (20kHz f ˂ 100kHz)
Not guarantee short circuit withstand time
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode Tc = 25 °C
Forward current
Tc = 100 °C
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
VCES / VR
VGES
IC
IC
IC(peak) Note1
IDF
IDF
IDF(peak) Note1
PC Note 2
j-c
650
30
90
45
335
30
15
100
375
0.40
V
V
A
A
A
A
A
A
W
°C/W
Junction to case thermal resistance (Diode)
Junction temperature
j-cd
Tj Note2
1.33 °C/ W
175 °C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW 10 s, duty cycle 1%
2. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1291EJ0101 Rev.1.01
Oct 22, 2015
Page 1 of 9

1 Page



RJH65T47DPQ-A0 pdf, ピン配列
RJH65T47DPQ-A0
Main Characteristics
Collector Dissipation vs.
Case Temperature
400
300
200
100
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
PW
100
100 μs
= 10 μs
10
1
Tc = 25°C
Single pulse
0.1
1 10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
180
10 V
150 15 V
Pulse Test
9.0 V Tc = 25°C
120 8.5 V
90 8.0 V
60
30 VGE = 7.5 V
0
0 2 4 6 8 10
Collector to Emitter Voltage VCE (V)
R07DS1291EJ0101 Rev.1.01
Oct 22, 2015
Preliminary
Maximum DC Collector Current vs.
Case Temperature
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Typical Transfer Characteristics
180
VCE = 10 V
Pulse Test
150
120
90
60
150°C
30
Tc = 25°C
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Typical Output Characteristics
180
10 V
150 15 V
120
Pulse Test
9.0 V Tc = 150°C
8.5 V
8.0 V
90
7.5 V
60
30 VGE = 7.0 V
0
0 2 4 6 8 10
Collector to Emitter Voltage VCE (V)
Page 3 of 9


3Pages


RJH65T47DPQ-A0 電子部品, 半導体
RJH65T47DPQ-A0
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
VGE = 0 V Tc = 25°C
f = 1 MHz
Cies
100
Coes
Cres
10
0 50 100 150 200 250 300
Collector to Emitter Voltage VCE (V)
Reverse Recovery Time vs.
Forward Current (Typical)
1000
VCC = 300 V
diF/dt = 300 A/us
Tc = 150°C
100
25°C
10
1 10 100
Forward Current IF (A)
Preliminary
Dynamic Input Characteristics (Typical)
800
VCC = 400 V
IC = 45 A
Tc = 25°C
600
VGE
16
12
400 8
200
0
0
VCE
4
0
40 80 120 160 200
Gate Charge Qg (nC)
Forward Current vs. Forward Voltage (Typical)
100
80
Tc = 25°C
60
150°C
40
20
VCE = 0 V
Pulse Test
0
012345
C-E Diode Forward Voltage VCEF (V)
R07DS1291EJ0101 Rev.1.01
Oct 22, 2015
Page 6 of 9

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