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RJH65T47DPQ-A0 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 RJH65T47DPQ-A0
部品説明 IGBT
メーカ Renesas
ロゴ Renesas ロゴ 

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RJH65T47DPQ-A0 Datasheet, RJH65T47DPQ-A0 PDF,ピン配置, 機能
Preliminary Datasheet
RJH65T47DPQ-A0
650V - 45A - IGBT
Application: Power Factor Correction circuit
R07DS1291EJ0101
Rev.1.01
Oct 22, 2015
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology (G7H series)
High speed switching
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 45 A, Rg = 10 , Ta = 25°CInductive load)
Operation frequency (20kHz f ˂ 100kHz)
Not guarantee short circuit withstand time
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode Tc = 25 °C
Forward current
Tc = 100 °C
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
VCES / VR
VGES
IC
IC
IC(peak) Note1
IDF
IDF
IDF(peak) Note1
PC Note 2
j-c
650
30
90
45
335
30
15
100
375
0.40
V
V
A
A
A
A
A
A
W
°C/W
Junction to case thermal resistance (Diode)
Junction temperature
j-cd
Tj Note2
1.33 °C/ W
175 °C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW 10 s, duty cycle 1%
2. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1291EJ0101 Rev.1.01
Oct 22, 2015
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