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RJH65T14DPQ-A0 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 RJH65T14DPQ-A0
部品説明 IGBT
メーカ Renesas
ロゴ Renesas ロゴ 

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RJH65T14DPQ-A0 Datasheet, RJH65T14DPQ-A0 PDF,ピン配置, 機能
RJH65T14DPQ-A0
650V - 50A - IGBT
Application: Induction Heating
Microwave Oven
Features
Optimized for current resonance application
Low collector to emitter saturation voltage
VCE(sat) = 1.45 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
Data Sheet
R07DS1256EJ0100
Rev.1.00
Mar 16, 2015
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode Tc = 25 °C
Forward current
Tc = 100 °C
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
VCES
VGES
IC Note1
IC Note1
iC(peak) Note1
IDF
IDF
iDF(peak) Note2
PC
j-c Note3
j-cd Note3
Tj Note4
650
30
100
50
180
40
20
100
250
0.6
1.33
175
V
V
A
A
A
A
A
A
W
°C/W
°C/W
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
3. Value at Tc = 25C
4. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
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