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Datasheet RJH65T14DPQ-A0 PDF ( 特性, スペック, ピン接続図 )

部品番号 RJH65T14DPQ-A0
部品説明 IGBT
メーカ Renesas
ロゴ Renesas ロゴ 
プレビュー
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RJH65T14DPQ-A0 Datasheet, RJH65T14DPQ-A0 PDF,ピン配置, 機能
RJH65T14DPQ-A0
650V - 50A - IGBT
Application: Induction Heating
Microwave Oven
Features
Optimized for current resonance application
Low collector to emitter saturation voltage
VCE(sat) = 1.45 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
Data Sheet
R07DS1256EJ0100
Rev.1.00
Mar 16, 2015
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode Tc = 25 °C
Forward current
Tc = 100 °C
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
VCES
VGES
IC Note1
IC Note1
iC(peak) Note1
IDF
IDF
iDF(peak) Note2
PC
j-c Note3
j-cd Note3
Tj Note4
650
30
100
50
180
40
20
100
250
0.6
1.33
175
V
V
A
A
A
A
A
A
W
°C/W
°C/W
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
3. Value at Tc = 25C
4. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
Page 1 of 9

1 Page



RJH65T14DPQ-A0 pdf, ピン配列
RJH65T14DPQ-A0
Main Characteristics
Collector Dissipation vs.
Case Temperature
300
100
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
100 PW = 10 μs
10
1
0.1
Tc = 25°C
Single pulse
0.01
1 10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
120
Pulse T2est
Tc = 25°C
90 15 V
10V
9.0V
60
8.0V
30
VGE = 7.0 V
0
012345
Collector to Emitter Voltage VCE (V)
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
Maximum DC Collector Current vs.
Case Temperature
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Typical Transfer Characteristics
120
VCE = 10 V
Pulse Test
90
60
150°C
Tc = 25°C
30
0
0 2 4 6 8 10
Gate to Emitter Voltage VGE (V)
Typical Output Characteristics
120
Pulse T2est
Tc = 150°C
10V
9.0V
90 15 V
60 8.0V
30
VGE = 7.0 V
0
012345
Collector to Emitter Voltage VCE (V)
Page 3 of 9


3Pages


RJH65T14DPQ-A0 電子部品, 半導体
RJH65T14DPQ-A0
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
VGE = 0 V Tc = 25°C
f = 1 MHz
Cies
100
Coes
10 Cres
1
0 50 100 150 200 250 300
Collector to Emitter Voltage VCE (V)
1000
800
Reverse Recovery Time vs.
Forward Current (Typical)
VCC = 300 V
diF/dt = 300 A/us
600
Tc = 150°C
400
25°C
200
0
0 20 40 60 80 100
Forward Current IF (A)
Dynamic Input Characteristics (Typical)
800
600
VCE
VCC = 480 V
300 V
120 V
VGE
16
12
400 8
200
0
0
VCC = 480 V
300 V
120 V
20 40 60
4
IC = 50 A
Ta = 25°C
0
80 100
Gate Charge Qg (nC)
Forward Current vs. Forward Voltage (Typical)
100
Tc = 25°C
80
150°C
60
40
20
VCE = 0 V
Pulse Test
0
01234
C-E Diode Forward Voltage VCEF (V)
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
Page 6 of 9

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