DataSheet.jp

RB751S-40 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 RB751S-40
部品説明 Schottky barrier Diodes
メーカ Transys
ロゴ Transys ロゴ 

Total 2 pages
		

No Preview Available !

RB751S-40 Datasheet, RB751S-40 PDF,ピン配置, 機能
RB751S-40 Schottky barrier Diodes
FEATURES
z Small surface mounting type
z Low reverse current and low forward voltage
z High reliability
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
Symbol
VRM
VR
IO
IFSM
Tj
Tstg
Limits
40
30
30
200
125
-55~+125
Unit
V
V
mA
mA
Electrical Ratings @TA=25
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
VF
IR
CT
Min. Typ. Max. Unit
0.37 V
0.5 µA
2 pF
Conditions
IF=1mA
VR=30V
VR=1V, f=1MHZ

1 Page





ページ 合計 : 2 ページ
PDF
ダウンロード
[ RB751S-40.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
RB751S-40

There is a function of Schottky barrier Diodes.

Transys
Transys
RB751S-40

There is a function of SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE.

SEMTECH
SEMTECH
RB751S-40

There is a function of SURFACE MOUNT SCHOTTKY DIODES.

Pan Jit International
Pan Jit International
RB751S-40

There is a function of Schottky barrier Diode.

JCET
JCET

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap