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RB717F データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 RB717F
部品説明 Schottky barrier Diode
メーカ JCET
ロゴ JCET ロゴ 

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RB717F Datasheet, RB717F PDF,ピン配置, 機能
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
RB717F SCHOTTKY BARRIER DIODE
FEATURES:
Low VF, Low VR
High reliability
MARKING: 3E·
SOT-323
1
3
2
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25
Parameter
Peak reverse voltage
DC reverse voltage
Non-repetitive Peak Forward Surge
Current@t=8.3ms
Average forward current
Power dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Symbol
VRM
VR
IFSM
IO
PD
RθJA
Tj
Tstg
Limit
40
40
200
30
200
500
125
-55~+150
Unit
V
V
mA
mA
mW
/W
ELECTRICAL CHA RACTERISTICS (Ta= 25unless otherwise specified)
Parameter
Reverse voltage leakage current
Symbol
IR
Test conditions
VR=10V
Min
Typ
Forward voltage
Capacitance between terminals
VF IF=1mA
CT VR=1V, f=1MHz
2.0
Max
1
0.37
Unit
μA
V
pF
www.cj-elec.com
1
D,Oct,2015

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