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RB706F-40 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 RB706F-40
部品説明 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
メーカ SEMTECH
ロゴ SEMTECH ロゴ 

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RB706F-40 Datasheet, RB706F-40 PDF,ピン配置, 機能
RB706F-40
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
For low current rectification
Features
• High reliability
• Low reverse current
3
12
Marking Code: ZA
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Peak Forward Surge Current (t = 8.3 ms)
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IO
IFSM
Tj
Tstg
Value
45
40
30
200
125
- 55 to + 125
Unit
V
V
mA
mA
OC
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 1 mA
Reverse Current
at VR = 10 V
Reverse Breakdown Voltage
at IR = 10 µA
Capacitance between Terminals
at VR = 1 V, f = 1 MHz
Symbol Min. Typ. Max. Unit
VF -
- 0.37 V
IR - - 1 µA
V(BR)R
CT
45
-
-
2
-V
- pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/03/2009

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