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RB706F-40 の電気的特性と機能

RB706F-40のメーカーはTaiwan Semiconductorです、この部品の機能は「Schottky Barrier Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 RB706F-40
部品説明 Schottky Barrier Diode
メーカ Taiwan Semiconductor
ロゴ Taiwan Semiconductor ロゴ 




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RB706F-40 Datasheet, RB706F-40 PDF,ピン配置, 機能
Small Signal
Features
Low reverse current, high reliability
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
Case : SOT-323 small outline plastic package
Terminal : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
High temperature soldering guaranteed : 260°C/10s
Polarity : Indicated by cathode band
Weight : 5 ± 0.5 mg
Marking Code : ZA
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Mean Forward Current
Non-Repetitive Peak Forward Surge Current
Thermal Resistance (Junction to Ambient)
Junction Temperature
Storage Temperature Range
( t = 8.3 ms )
Symbol
VRRM
VR
IO
IFSM
RθJA
TJ
TSTG
Electrical Characteristics
Parameter
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
IR = 10 μA
IF = 1 mA
VR = 10 V
VR = 1 V , f = 1.0 MHz
Symbol
V(BR)
VF
IR
CJ
RB706F-40
Low VF SMD Schottky Barrier Diode
SOT-323
Value
45
40
30
0.2
500
125
-55 to + 125
Min Max
45 -
- 0.37
-1
2 (TYP)
Units
V
V
mA
A
oC/W
oC
oC
Units
V
V
μA
pF
Version : B14

1 Page





RB706F-40 pdf, ピン配列
Small Signal Product
20
RATINGS AND CHARACTERISTICS CURVES
IFSM Cycle Characteristics
20
15 15
10 10
5
0
10
9
8
7
6
5
4
3
2
1
0
1
AVE : 7.30 A
IFSM Dispersion Map
IFSM - t Characteristics
10
Time : t (ms)
100
5
0
1
1000
100
10
Number of Cycles
100
Rth - t Characteristics
Rth(j-a)
Rth(j-c)
10
1
0.001
0.01
0.1 1 10
Time : t (s)
100 1000
IO - Pf Characteristics
0.04
0.03
0.02
Sin(θ=180)
D=1/2
DC
0.01
0.00
0
0.01
0.02
0.03
0.04
Average Rectified Forward Current : IO (A)
0.05
0.003
0.002
0.001
0.000
0
VR - PR Characteristics
Sin(θ=180)
DC
D=1/2
10 20
Reverse Voltage : VR (V)
30
Version : B14


3Pages





ページ 合計 : 5 ページ
 
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ダウンロード
[ RB706F-40 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
RB706F-40

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

SEMTECH
SEMTECH
RB706F-40

Schottky Barrier Diodes

LGE
LGE
RB706F-40

Schottky Barrier Diode

Taiwan Semiconductor
Taiwan Semiconductor
RB706F-40

Schottky barrier Diode

JCET
JCET


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