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RB706F-40のメーカーはTaiwan Semiconductorです、この部品の機能は「Schottky Barrier Diode」です。 |
部品番号 | RB706F-40 |
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部品説明 | Schottky Barrier Diode | ||
メーカ | Taiwan Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとRB706F-40ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Small Signal
Features
◇ Low reverse current, high reliability
◇ Surface device type mounting
◇ Moisture sensitivity level 1
◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate
◇ Pb free version and RoHS compliant
◇ Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
◇ Case : SOT-323 small outline plastic package
◇ Terminal : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
◇ High temperature soldering guaranteed : 260°C/10s
◇ Polarity : Indicated by cathode band
◇ Weight : 5 ± 0.5 mg
◇ Marking Code : ZA
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Mean Forward Current
Non-Repetitive Peak Forward Surge Current
Thermal Resistance (Junction to Ambient)
Junction Temperature
Storage Temperature Range
( t = 8.3 ms )
Symbol
VRRM
VR
IO
IFSM
RθJA
TJ
TSTG
Electrical Characteristics
Parameter
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
IR = 10 μA
IF = 1 mA
VR = 10 V
VR = 1 V , f = 1.0 MHz
Symbol
V(BR)
VF
IR
CJ
RB706F-40
Low VF SMD Schottky Barrier Diode
SOT-323
Value
45
40
30
0.2
500
125
-55 to + 125
Min Max
45 -
- 0.37
-1
2 (TYP)
Units
V
V
mA
A
oC/W
oC
oC
Units
V
V
μA
pF
Version : B14
1 Page Small Signal Product
20
RATINGS AND CHARACTERISTICS CURVES
IFSM Cycle Characteristics
20
15 15
10 10
5
0
10
9
8
7
6
5
4
3
2
1
0
1
AVE : 7.30 A
IFSM Dispersion Map
IFSM - t Characteristics
10
Time : t (ms)
100
5
0
1
1000
100
10
Number of Cycles
100
Rth - t Characteristics
Rth(j-a)
Rth(j-c)
10
1
0.001
0.01
0.1 1 10
Time : t (s)
100 1000
IO - Pf Characteristics
0.04
0.03
0.02
Sin(θ=180)
D=1/2
DC
0.01
0.00
0
0.01
0.02
0.03
0.04
Average Rectified Forward Current : IO (A)
0.05
0.003
0.002
0.001
0.000
0
VR - PR Characteristics
Sin(θ=180)
DC
D=1/2
10 20
Reverse Voltage : VR (V)
30
Version : B14
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ RB706F-40 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
RB706F-40 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | SEMTECH |
RB706F-40 | Schottky Barrier Diodes | LGE |
RB706F-40 | Schottky Barrier Diode | Taiwan Semiconductor |
RB706F-40 | Schottky barrier Diode | JCET |