(PDF) RB521S-30 Datasheet - Schottky barrier Diode

Número de pieza	RB521S-30
Descripción	Schottky barrier Diode
Fabricantes	JCET
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes RB521S-30 Schottky barrier Diode FEATURE z Small surface mounting type z Low reverse current and low forward voltage z High reliability SOD-523 + - MARKING: C The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter DC reverse voltage Mean rectifying current Non-repetitive Peak forward surge current @ t=8.3ms Power dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature Symbol VR IO IFSM PD RθJA Tj Tstg Limit 30 200 1 150 667 125 -55~+150 Unit V mA A mW ℃/W ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Symbol Min Typ Max Unit VF1 0.35 V VF2 0.5 V IR 30 μA Conditions IF=10mA IF=200mA VR=10V www.cj-elec.com 1 E,Mar,2015 1 page

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PDF RB521S-30 Data sheet ( Hoja de datos )