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RB521G-30 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 RB521G-30
部品説明 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
メーカ SEMTECH
ロゴ SEMTECH ロゴ 

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RB521G-30 Datasheet, RB521G-30 PDF,ピン配置, 機能
RB521G-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for rectifying small power application
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
E
Top View
Marking Code: "E"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Reverse Voltage
Average Rectified Forward Current
Peak Forward Surge Current (60 Hz for 1 cyc.)
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 10 mA
Reverse Current
at VR = 10 V
Symbol
VR
IO
IFSM
Tj
Ts
Value
30
100
1
125
- 40 to + 125
Unit
V
mA
A
OC
OC
Symbol
VF
IR
Max.
0.35
10
Unit
V
µA
Note: Please pay attention to static electricity when handling.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006

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