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Datasheet BF858 PDF ( 特性, スペック, ピン接続図 )

部品番号 BF858
部品説明 NPN high-voltage transistor
メーカ Philips
ロゴ Philips ロゴ 
プレビュー
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BF858 Datasheet, BF858 PDF,ピン配置, 機能
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D067
BF857; BF858; BF859
NPN high-voltage transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 09

1 Page



BF858 pdf, ピン配列
Philips Semiconductors
NPN high-voltage transistors
Product specification
BF857; BF858; BF859
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BF857
BF858
BF859
collector-emitter voltage
BF857
BF858
BF859
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C
Tmb 75 °C
MIN. MAX. UNIT
160 V
250 V
300 V
160 V
250 V
300 V
5V
100 mA
300 mA
100 mA
2W
6W
65 +150 °C
150 °C
65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
VALUE
62.5
12.5
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
ICBO
ICBO
IEBO
hFE
VCEsat
Cre
fT
collector cut-off current
BF857
collector cut-off current
BF858
collector cut-off current
BF859
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
MIN.
IE = 0; VCB = 100 V
IE = 0; VCB = 200 V
IE = 0; VCB = 250 V
IC = 0; VEB = 5 V
IC = 30 mA; VCE = 10 V
IC = 30 mA; IB = 6 mA
IC = ic = 0; VCE = 30 V; f = 1 MHz
IC = 15 mA; VCE = 10 V; f = 100 MHz
26
90
MAX. UNIT
0.1 µA
0.1 µA
0.1 µA
100 nA
1V
3 pF
MHz
1996 Dec 09
3


3Pages


BF858 電子部品, 半導体
Philips Semiconductors
NPN high-voltage transistors
NOTES
Product specification
BF857; BF858; BF859
1996 Dec 09
6

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