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PDF BS170G Data sheet ( Hoja de datos )
| Número de pieza | BS170G | |
| Descripción | Small Signal MOSFET | |
| Fabricantes | ON Semiconductor | |
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BS170G
Small Signal MOSFET
500 mA, 60 Volts
N−Channel TO−92 (TO−226)
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain −Source Voltage
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)
Drain Current (Note)
Total Device Dissipation @ TA = 25°C
Operating and Storage Junction
Temperature Range
VDS 60
VGS
VGSM
ID
PD
TJ, Tstg
± 20
± 40
0.5
350
−55 to
+150
Vdc
Vdc
Vpk
Adc
mW
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE: The Power Dissipation of the package may result in a lower continuous
drain current.
http://onsemi.com
500 mA, 60 Volts
RDS(on) = 5.0 W
N−Channel
D
G
S
123
TO−92 (TO−226)
CASE 29
STYLE 30
MARKING DIAGRAM
& PIN ASSIGNMENT
BS170
AYWWG
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
April, 2011 − Rev. 6
1
123
Drain Gate Source
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
BS170/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BS170G.PDF ] | |
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