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Datasheet AP40P03GI-HF PDF ( 特性, スペック, ピン接続図 )

部品番号 AP40P03GI-HF
部品説明 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 
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AP40P03GI-HF Datasheet, AP40P03GI-HF PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP40P03GI-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower On-resistance
D
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
S
Description
AP40P03 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
BVDSS
RDS(ON)
ID
-30V
28mΩ
-30A
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
-30 V
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
+20
-30
-18
-120
31.3
0.25
V
A
A
A
W
W/
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
4
65
Units
/W
/W
1
201501294

1 Page



AP40P03GI-HF pdf, ピン配列
120
T A = 25 o C
100
80
-10V
-7.0V
60 -5.0V
40 -4.5V
20 V G = -3.0 V
0
02468
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
58
I D = -10 A
48 T C =25
38
28
18
2 4 6 8 10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
18
15
12
9
T j =150 o C
T j =25 o C
6
3
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP40P03GI-HF
100
TA=150oC
80
-10V
-7.0V
60
-5.0V
40
-4.5V
20 V G = -3.0 V
0
02468
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I D =- 18 A
1.4 V G =-10V
1.2
1.0
0.8
0.6
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1.0
0.8
0.6
0.4
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3


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