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4N35 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 4N35
部品説明 N-Channel MOSFET Transistor
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 

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4N35 Datasheet, 4N35 PDF,ピン配置, 機能
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
4N35
DESCRIPTION
·Drain Current ID= 4A@ TC=25
·Drain Source Voltage-
: VDSS= 350V(Min)
·Fast Switching Speed
APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
350
±30
4
V
V
A
ID(puls)
Pulse Drain Current
16 A
Ptot Total Dissipation@TC=25
75 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
3 /W
62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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www.fineprint.cn

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